Datasheet HMC464 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz |
| 页数 / 页 | 6 / 1 — HMC464. GaAs PHEMT MMIC. POWER AMPLIFIER, 2 - 20 GHz. Typical … |
| 文件格式/大小 | PDF / 347 Kb |
| 文件语言 | 英语 |
HMC464. GaAs PHEMT MMIC. POWER AMPLIFIER, 2 - 20 GHz. Typical Applications. Features. Functional Diagram. General Description
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HMC464
v04.0308
GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Typical Applications Features
The HMC464 wideband driver is ideal for: P1dB Output Power: +26 dBm • Telecom Infrastructure Gain: 16 dB 3 • Microwave Radio & VSAT Output IP3: +30 dBm • Military & Space Supply Voltage: +8.0V @ 290 mA • Test Instrumentation 50 Ohm Matched Input/Output IP • Fiber Optics Die Size: 3.12 x 1.63 x 0.1 mm H
Functional Diagram General Description
The HMC464 is a GaAs MMIC PHEMT Distributed S - C Power Amplifi er die which operates between 2 and R 20 GHz. The amplifi er provides 16 dB of gain, +30 dBm IE Output IP3 and +26 dBm of output power at 1 dB gain IF compression while requiring 290 mA from a +8V sup- L ply. Gain fl atness is excellent from 2 - 18 GHz making P the HMC464 ideal for EW, ECM and radar driver M amplifi er applications. The HMC464 amplifi er I/O’s are internally matched to 50 Ohms facilitating easy R A integration into Multi-Chip-Modules (MCMs). All data E is with the chip in a 50 Ohm test fi xture connected W via 0.025mm (1 mil) diameter wire bonds of minimal O length 0.31mm (12 mils). R & P A E IN
Electrical Specifi cations, T = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
L
A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 2.0 - 6.0 6.0 - 18.0 18.0 - 20.0 GHz Gain 14 16 13 16 11 14 dB Gain Flatness ±0.25 ±0.5 ±0.75 dB Gain Variation Over Temperature 0.02 0.03 0.02 0.03 0.03 0.04 dB/ °C Input Return Loss 15 17 13 dB Output Return Loss 14 12 11 dB Output Power for 1 dB Compression (P1dB) 23.5 26.5 22 26 19 22 dBm Saturated Output Power (Psat) 28 27.5 24.5 dBm Output Third Order Intercept (IP3) 32 30 24 dBm Noise Figure 4.0 4.0 6.0 dB Supply Current 290 290 290 mA (Idd) (Vdd= 8V, Vgg1= -0.5V Typ.) * Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical. Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 36
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v04.0308
GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Typical Applications Features
The HMC464 wideband driver is ideal for: P1dB Output Power: +26 dBm • Telecom Infrastructure Gain: 16 dB 3 • Microwave Radio & VSAT Output IP3: +30 dBm • Military & Space Supply Voltage: +8.0V @ 290 mA • Test Instrumentation 50 Ohm Matched Input/Output IP • Fiber Optics Die Size: 3.12 x 1.63 x 0.1 mm H
Functional Diagram General Description
The HMC464 is a GaAs MMIC PHEMT Distributed S - C Power Amplifi er die which operates between 2 and R 20 GHz. The amplifi er provides 16 dB of gain, +30 dBm IE Output IP3 and +26 dBm of output power at 1 dB gain IF compression while requiring 290 mA from a +8V sup- L ply. Gain fl atness is excellent from 2 - 18 GHz making P the HMC464 ideal for EW, ECM and radar driver M amplifi er applications. The HMC464 amplifi er I/O’s are internally matched to 50 Ohms facilitating easy R A integration into Multi-Chip-Modules (MCMs). All data E is with the chip in a 50 Ohm test fi xture connected W via 0.025mm (1 mil) diameter wire bonds of minimal O length 0.31mm (12 mils). R & P A E IN
Electrical Specifi cations, T = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
L
A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 2.0 - 6.0 6.0 - 18.0 18.0 - 20.0 GHz Gain 14 16 13 16 11 14 dB Gain Flatness ±0.25 ±0.5 ±0.75 dB Gain Variation Over Temperature 0.02 0.03 0.02 0.03 0.03 0.04 dB/ °C Input Return Loss 15 17 13 dB Output Return Loss 14 12 11 dB Output Power for 1 dB Compression (P1dB) 23.5 26.5 22 26 19 22 dBm Saturated Output Power (Psat) 28 27.5 24.5 dBm Output Third Order Intercept (IP3) 32 30 24 dBm Noise Figure 4.0 4.0 6.0 dB Supply Current 290 290 290 mA (Idd) (Vdd= 8V, Vgg1= -0.5V Typ.) * Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical. Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 36
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D