Datasheet HMC327MS8G, 327MS8GE (Analog Devices) - 3

HMC327MS8G / 327MS8GE
v05.0509
GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Power Compression @ 3.5 GHz Output IP3 vs. Temperature
48 44 Pout 40 Gain 39 PAE 32 34 +25 C 24 29 +85 C -40 C 11 IP3 (dBm) 16 24 8 Pout (dBm), GAIN (dB), PAE (%) 19 T 0 14 -5 -1 3 7 11 15 2.5 3 3.5 4 4.5 INPUT POWER (dBm) FREQUENCY (GHz) - SM S R
Noise Figure vs. Temperature Gain & Power vs. Supply Voltage
IE 10 28 32 IF L +25 C 8 +85 C 26 30 P1dB (dBm) & Psat (dBm) P -40 C M 6 24 28 GURE (dB) 4 GAIN (dB) 22 26 SE FI R A NOI E 2 20 24 P1dB W Psat Gain O 0 18 22 3 3.5 4 4.5 4.75 5 5.25 FREQUENCY (GHz) Vcc SUPPLY VOLTAGE (V) & P R A
Reverse Isolation vs. Temperature Power Down Isolation
E 0 0 IN L -10 -10 +25 C -20 +85 C -40 C -30 -20 ISOLATION (dB) -40 ISOLATION (dB) -30 -50 -60 -40 2.5 3 3.5 4 4.5 2.5 3 3.5 4 4.5 FREQUENCY (GHz) FREQUENCY (GHz) Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
11 - 4
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