Datasheet ADL6010S (Analog Devices) - 6

Minimum input level, ±1 dB error (min Pin) Continuous Wave (CW) input, +25C; Three point calibration at For 500MHz: -26 dBm, -14 dBm, and +5 dBm ……………….. ……… -28 dBm For 1GHz: -25 dBm, -10 dBm, and +8 dBm …………………………… -30 dBm For 5GHz: -25 dBm, -10 dBm, and +8 dBm …………………………… -30 dBm For 10GHz: -28 dBm, -10 dBm, and +10 dBm ……………………….. -30 dBm For 15GHz: -28 dBm, -10 dBm, and +10 dBm ……………………….. -30 dBm For 20GHz: -28 dBm, -10 dBm, and +8 dBm …………….. -30 dBm For 25GHz: -28 dBm, 0 dBm, and +10 dBm …………………………. -30 dBm For 30GHz: -26 dBm, -14 dBm, and +5 dBm …………….. -29 dBm For 35GHz: -25 dBm, 0 dBm, and +10 dBm …………………………. -29 dBm For 40GHz: -20 dBm, 0 dBm, and +10 dBm …………………………. -25 dBm For 43.5GHz: -20 dBm, 0 dBm, and +10 dBm ………………………. -24 dBm (Range) Continuous Wave (CW) input, +25C; Three point calibration at For 500MHz: -26 dBm, -14 dBm, and +5 dBm ……………..…………. 44 dB For 1GHz: -25 dBm, -10 dBm, and +8 dBm ………………..………… 45 dB For 5GHz: -25 dBm, -10 dBm, and +8 dBm …………………..……… 46 dB For 10GHz: -28 dBm, -10 dBm, and +10 dBm …………….………… 46dB For 15GHz: -28 dBm, -10 dBm, and +10 dBm ……………….……… 46 dB For 20GHz: -28 dBm, -10 dBm, and +8 dBm ……………...………… 46 dB For 25GHz: -28 dBm, 0 dBm, and +10 dBm ………………………… 45 dB For 30GHz: -26 dBm, -14 dBm, and +5 dBm ……………...……. …. 45 dB For 35GHz: -25 dBm, 0 dBm, and +10 dBm ………………………… 44 dB For 40GHz: -20 dBm, 0 dBm, and +10 dBm ………………………… 42 dB For 43.5GHz: -20 dBm, 0 dBm, and +10 dBm …………….………... 41 dB Maximum total dose available (dose rate = 50 – 300 rads(Si)/s)….100 k rads(Si) 5/ No Single Event latchup (SEL) occurs at Effective linear energy transfer (LET): ≤ 80 MeV-cm2/mg 6/ 1/ Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions outside of those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. 2/ Driven from a 50 source 3/ Measurement taken under absolute worst case condition and represents data taken with thermal camera for highest power density location. 4/ RF signal power is terminated to and dissipated by two resistor on the die. Calculate junction temperature using Vpos power and JA, then Calculate termination resistor temperature using RF power and termJ. The temperature of these termination resistors on the die must not exceed junction temperature maximum: Applied input power must be derated to keep termination resistor temperature below maximum. 5/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A 6/ Limits are characterized at initial qualification and after any design or process changes that may affect the SEP characteristics, but are not production lot tested unless specified by the customer through the purchase order or contract. For more information on single event effect (SEE) test results, customers are requested to contact the manufacturer.