Datasheet STD30NF06L (STMicroelectronics) - 2

STD30NF06L THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 2.14 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Tl Maximum Lead Temperature For Soldering Purpose 275 °C
AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 35 A (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy 150 mJ (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 µA, VGS = 0 60 V Breakdown Voltage IDSS Zero Gate Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C 10 µA IGSS Gate-body Leakage VGS = ± 20 V ±100 nA Current (VDS = 0) ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.7 2.5 V RDS(on) Static Drain-source On VGS = 5 V, ID = 18 A 0.025 0.03 Ω Resistance VGS = 10 V, ID = 18 A 0.022 0.028 Ω DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS > =15 V , ID =15 A 25 S Ciss Input Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 1600 pF Coss Output Capacitance 215 pF Crss Reverse Transfer 60 pF Capacitance 2/10