Datasheet STD30NF06 (STMicroelectronics) - 3
| 制造商 | STMicroelectronics |
| 描述 | N-Channel 60V - 0.020 Ohm - 28A - DPAK StripFET(TM) II POWER MOSFET |
| 页数 / 页 | 10 / 3 — STD30NF06. ELECTRICAL CHARACTERISTICS. Symbol. Parameter. Test … |
| 文件格式/大小 | PDF / 472 Kb |
| 文件语言 | 英语 |
STD30NF06. ELECTRICAL CHARACTERISTICS. Symbol. Parameter. Test Conditions. Min. Typ. Max. Unit
该数据表的模型线
文件文字版本
STD30NF06 ELECTRICAL CHARACTERISTICS
(continued) SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 30 V ID = 19 A 20 ns tr Rise Time RG = 4.7 Ω VGS = 10 V 100 ns (Resistive Load, Figure 3) Qg Total Gate Charge VDD = 48V ID = 38A VGS= 10V 43 58 nC Qgs Gate-Source Charge 9.5 nC Qgd Gate-Drain Charge 15 nC SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-off Delay Time VDD = 30 V ID = 19 A 50 ns tf Fall Time RG = 4.7Ω, VGS = 10 V 20 ns (Resistive Load, Figure 3) SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 28 A ISDM (•) Source-drain Current (pulsed) 112 A VSD (*) Forward On Voltage ISD = 28 A VGS = 0 1.5 V trr Reverse Recovery Time ISD = 28 A di/dt = 100A/µs 95 ns Qrr Reverse Recovery Charge VDD = 30 V Tj = 150°C 260 µC IRRM Reverse Recovery Current (see test circuit, Figure 5) 5.5 A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/10
(continued) SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 30 V ID = 19 A 20 ns tr Rise Time RG = 4.7 Ω VGS = 10 V 100 ns (Resistive Load, Figure 3) Qg Total Gate Charge VDD = 48V ID = 38A VGS= 10V 43 58 nC Qgs Gate-Source Charge 9.5 nC Qgd Gate-Drain Charge 15 nC SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-off Delay Time VDD = 30 V ID = 19 A 50 ns tf Fall Time RG = 4.7Ω, VGS = 10 V 20 ns (Resistive Load, Figure 3) SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 28 A ISDM (•) Source-drain Current (pulsed) 112 A VSD (*) Forward On Voltage ISD = 28 A VGS = 0 1.5 V trr Reverse Recovery Time ISD = 28 A di/dt = 100A/µs 95 ns Qrr Reverse Recovery Charge VDD = 30 V Tj = 150°C 260 µC IRRM Reverse Recovery Current (see test circuit, Figure 5) 5.5 A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/10