Datasheet BD135G, BD137G, BD139G (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | 1.5 A POWER TRANSISTORS NPN SILICON 45, 60, 80 V, 12.5 W |
| 页数 / 页 | 5 / 2 — BD135G, BD137G, BD139G. ELECTRICAL CHARACTERISTICS. Characteristic. … |
| 修订版 | 17 |
| 文件格式/大小 | PDF / 137 Kb |
| 文件语言 | 英语 |
BD135G, BD137G, BD139G. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. UnIt. TYPICAL CHARACTERISTICS
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BD135G, BD137G, BD139G ELECTRICAL CHARACTERISTICS
(TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max UnIt
Collector−Emitter Sustaining Voltage* BVCEO* Vdc (IC = 0.03 Adc, IB = 0) BD135G 45 − BD137G 60 − BD139G 80 − Collector Cutoff Current ICBO mAdc (VCB = 30 Vdc, IE = 0) − 0.1 (VCB = 30 Vdc, IE = 0, TC = 125_C) − 10 Emitter Cutoff Current IEBO − 10 mAdc (VBE = 5.0 Vdc, IC = 0) DC Current Gain hFE* − (IC = 0.005 A, VCE = 2 V) 25 − (IC = 0.15 A, VCE = 2 V) 40 250 (IC = 0.5 A VCE = 2 V) 25 − Collector−Emitter Saturation Voltage* VCE(sat)* Vdc (IC = 0.5 Adc, IB = 0.05 Adc) − 0.5 Base−Emitter On Voltage* VBE(on)* Vdc (IC = 0.5 Adc, VCE = 2.0 Vdc) − 1 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
1000 0.3 VCE = 2 V IC/IB = 10 150°C 150°C AGE (V) 0.2 T 25°C OR−EMITTER −55°C 100 −55°C 25°C TION VOL 0.1 , DC CURRENT GAIN , COLLECT FE TURA h SA CE(sat)V 10 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage http://onsemi.com 2
(TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max UnIt
Collector−Emitter Sustaining Voltage* BVCEO* Vdc (IC = 0.03 Adc, IB = 0) BD135G 45 − BD137G 60 − BD139G 80 − Collector Cutoff Current ICBO mAdc (VCB = 30 Vdc, IE = 0) − 0.1 (VCB = 30 Vdc, IE = 0, TC = 125_C) − 10 Emitter Cutoff Current IEBO − 10 mAdc (VBE = 5.0 Vdc, IC = 0) DC Current Gain hFE* − (IC = 0.005 A, VCE = 2 V) 25 − (IC = 0.15 A, VCE = 2 V) 40 250 (IC = 0.5 A VCE = 2 V) 25 − Collector−Emitter Saturation Voltage* VCE(sat)* Vdc (IC = 0.5 Adc, IB = 0.05 Adc) − 0.5 Base−Emitter On Voltage* VBE(on)* Vdc (IC = 0.5 Adc, VCE = 2.0 Vdc) − 1 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
1000 0.3 VCE = 2 V IC/IB = 10 150°C 150°C AGE (V) 0.2 T 25°C OR−EMITTER −55°C 100 −55°C 25°C TION VOL 0.1 , DC CURRENT GAIN , COLLECT FE TURA h SA CE(sat)V 10 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage http://onsemi.com 2