Datasheet BD136G, BD138G, BD140G (ON Semiconductor)
| 制造商 | ON Semiconductor |
| 描述 | 1.5 A POWER TRANSISTORS PNP SILICON 45, 60, 80 V, 12.5 W |
| 页数 / 页 | 5 / 1 — www.onsemi.com. Features. 1.5 A POWER TRANSISTORS. PNP SILICON. 45, 60, … |
| 修订版 | 16 |
| 文件格式/大小 | PDF / 176 Kb |
| 文件语言 | 英语 |
www.onsemi.com. Features. 1.5 A POWER TRANSISTORS. PNP SILICON. 45, 60, 80 V, 12.5 W. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. TO−225
该数据表的模型线
文件文字版本
BD136G, BD138G, BD140G Plastic Medium-Power Silicon PNP Transistors This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
www.onsemi.com Features
• High DC Current Gain
1.5 A POWER TRANSISTORS
• BD 136, 138, 140 are complementary with BD 135, 137, 139
PNP SILICON
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
45, 60, 80 V, 12.5 W
Compliant*
MAXIMUM RATINGS
COLLECTOR 2, 4
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO Vdc BD136G 45 3 BD138G 60 BASE BD140G 80 Collector−Base Voltage V 1 CBO Vdc BD136G 45 EMITTER BD138G 60 BD140G 100 Emitter−Base Voltage VEBO 5.0 Vdc Collector Current IC 1.5 Adc
TO−225
Base Current IB 0.5 Adc
CASE 77−09
Total Device Dissipation P
STYLE 1
D @ TA = 25°C 1.25 Watts Derate above 25°C 10 mW/°C 1 2 3 Total Device Dissipation PD @ TC = 25°C 12.5 Watts Derate above 25°C 100 mW/°C
MARKING DIAGRAM
Operating and Storage Junction TJ, Tstg – 55 to + 150 °C Temperature Range YWW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be BD1xxG assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Y = Year WW = Work Week
Characteristic Symbol Max Unit
BD1xx = Device Code Thermal Resistance, Junction−to−Case RqJC 10 °C/W xx = 36, 38, 40 G = Pb−Free Package Thermal Resistance, Junction−to−Ambient RqJA 100 °C/W
ORDERING INFORMATION Device Package Shipping
BD136G TO−225 500 Units/Box (Pb−Free) BD138G TO−225 500 Units/Box (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please BD140G TO−225 500 Units/Box download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (Pb−Free) © Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
December, 2013 − Rev. 16 BD136G/D
www.onsemi.com Features
• High DC Current Gain
1.5 A POWER TRANSISTORS
• BD 136, 138, 140 are complementary with BD 135, 137, 139
PNP SILICON
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
45, 60, 80 V, 12.5 W
Compliant*
MAXIMUM RATINGS
COLLECTOR 2, 4
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO Vdc BD136G 45 3 BD138G 60 BASE BD140G 80 Collector−Base Voltage V 1 CBO Vdc BD136G 45 EMITTER BD138G 60 BD140G 100 Emitter−Base Voltage VEBO 5.0 Vdc Collector Current IC 1.5 Adc
TO−225
Base Current IB 0.5 Adc
CASE 77−09
Total Device Dissipation P
STYLE 1
D @ TA = 25°C 1.25 Watts Derate above 25°C 10 mW/°C 1 2 3 Total Device Dissipation PD @ TC = 25°C 12.5 Watts Derate above 25°C 100 mW/°C
MARKING DIAGRAM
Operating and Storage Junction TJ, Tstg – 55 to + 150 °C Temperature Range YWW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be BD1xxG assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Y = Year WW = Work Week
Characteristic Symbol Max Unit
BD1xx = Device Code Thermal Resistance, Junction−to−Case RqJC 10 °C/W xx = 36, 38, 40 G = Pb−Free Package Thermal Resistance, Junction−to−Ambient RqJA 100 °C/W
ORDERING INFORMATION Device Package Shipping
BD136G TO−225 500 Units/Box (Pb−Free) BD138G TO−225 500 Units/Box (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please BD140G TO−225 500 Units/Box download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (Pb−Free) © Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
December, 2013 − Rev. 16 BD136G/D