Datasheet C2M0080170P (Wolfspeed)
| 制造商 | Wolfspeed |
| 描述 | Silicon Carbide Power MOSFET 1700 V 40 A 80 mΩ |
| 页数 / 页 | 10 / 1 — C2M0080170P. I D@ 25˚C. Silicon Carbide Power MOSFET. DS(on). C2MTM … |
| 文件格式/大小 | PDF / 1.2 Mb |
| 文件语言 | 英语 |
C2M0080170P. I D@ 25˚C. Silicon Carbide Power MOSFET. DS(on). C2MTM MOSFET Technology. Features. Package. TAB. Drain. Benefits
该数据表的模型线
文件文字版本
V
1700 V
DS C2M0080170P I D@ 25˚C
40 A
Silicon Carbide Power MOSFET R
80 mΩ
DS(on) C2MTM MOSFET Technology
N-Channel Enhancement Mode
Features Package
• Optimized package with separate driver source pin
TAB
• 8mm of creepage distance between drain and source
Drain
• High blocking voltage with low On-resistance • High speed switching with low capacitances • Easy to parallel and simple to drive • Halogen Free, RoHS compliant
Benefits Drain
•
(Pin 1, TAB)
Reduce switching losses and minimize gate ringing • Higher system efficiency
1 2 3 4
•
D S S G
Reduced cooling requirements • Increased power density • Increased system switching frequency
Gate (Pin 4) Applications Driver Power Source Source
•
(Pin 3) (Pin 2)
1500V Solar Inverters • Switch Mode Power Supplies • High voltage DC/DC Converters
Part Number Package Marking
• Capacitor discharge C2M0080170P TO-247-4 Plus C2M0080170P
Maximum Ratings
(T = 25 ˚C unless otherwise specified) C
Symbol Parameter Value Unit Test Conditions Note
VDSmax Drain - Source Voltage 1700 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -10/+25 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage -5/+20 V Static Note: 2 40 V I GS = 20 V, TC = 25˚C Fig. 19 D Continuous Drain Current A 27 VGS = 20 V, TC = 100˚C ID(pulse) Pulsed Drain Current 80 A Pulse width tP limited by Tjmax Fig. 22 P Power Dissipation 277 W T =25˚C, T = 150 ˚C Fig. 20 D C J T , T -55 to Operating Junction and Storage Temperature J stg +150 ˚C T Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s L Note (1): When using MOSFET Body Diode V = -5V/+25V GSmax Note (2): MOSFET can also safely operate at 0/+20V
1
C2M0080170P Rev. A, 05-2018
1700 V
DS C2M0080170P I D@ 25˚C
40 A
Silicon Carbide Power MOSFET R
80 mΩ
DS(on) C2MTM MOSFET Technology
N-Channel Enhancement Mode
Features Package
• Optimized package with separate driver source pin
TAB
• 8mm of creepage distance between drain and source
Drain
• High blocking voltage with low On-resistance • High speed switching with low capacitances • Easy to parallel and simple to drive • Halogen Free, RoHS compliant
Benefits Drain
•
(Pin 1, TAB)
Reduce switching losses and minimize gate ringing • Higher system efficiency
1 2 3 4
•
D S S G
Reduced cooling requirements • Increased power density • Increased system switching frequency
Gate (Pin 4) Applications Driver Power Source Source
•
(Pin 3) (Pin 2)
1500V Solar Inverters • Switch Mode Power Supplies • High voltage DC/DC Converters
Part Number Package Marking
• Capacitor discharge C2M0080170P TO-247-4 Plus C2M0080170P
Maximum Ratings
(T = 25 ˚C unless otherwise specified) C
Symbol Parameter Value Unit Test Conditions Note
VDSmax Drain - Source Voltage 1700 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -10/+25 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage -5/+20 V Static Note: 2 40 V I GS = 20 V, TC = 25˚C Fig. 19 D Continuous Drain Current A 27 VGS = 20 V, TC = 100˚C ID(pulse) Pulsed Drain Current 80 A Pulse width tP limited by Tjmax Fig. 22 P Power Dissipation 277 W T =25˚C, T = 150 ˚C Fig. 20 D C J T , T -55 to Operating Junction and Storage Temperature J stg +150 ˚C T Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s L Note (1): When using MOSFET Body Diode V = -5V/+25V GSmax Note (2): MOSFET can also safely operate at 0/+20V
1
C2M0080170P Rev. A, 05-2018