Datasheet 2SK2225 (Renesas) - 3

制造商Renesas
描述1500V -2A - MOS FET High Speed Power Switching
页数 / 页7 / 3 — Main Characteristics
文件格式/大小PDF / 321 Kb
文件语言英语

Main Characteristics

Main Characteristics

该数据表的模型线

文件文字版本

2SK2225
Main Characteristics
Power vs. Temperature Derating Maximum Safe Operation Area 80 10 10 μs 100 3 PW = 10 m μ 60 1 ms s (A) 1 DC Ope D s (1shot) 40 0.3 ration (Tc = 25 0.1 Operation in this area is 20 limited by R ° DS(on) C) Drain Current I 0.03 Channel Dissipation Pch (W) Ta = 25°C 0.01 0 50 100 150 200 10 30 100 300 1000 3000 10000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 5 2.0 15 V 10 V 8 V Pulse Test V 4 1.6 DS = 25 V Pulse Test (A) (A) 7 V D D 3 1.2 6 V 2 0.8 Tc = 75°C 25°C Drain Current I 5 V Drain Current I 1 0.4 –25°C VGS = 4 V 0 20 40 60 80 100 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current (V) Ω 50 ( 50 DS (on) Pulse Test DS (on) 40 20 VGS = 10 V ID = 3 A 10 15 V 30 5 2 A 20 2 1 A Pulse Test 10 1 0.5 A 0.5 0 4 8 12 16 20 0.1 0.2 0.5 1 2 5 10 Static Drain to Source on State Resistance R Drain to Source Saturation Voltage V Gate to Source Voltage VGS (V) Drain Current ID (A) R07DS1358EJ0400 Rev.4.00 Page 3 of 6 Dec 06, 2017