Datasheet 2N3439, 2N3440 (STMicroelectronics)
| 制造商 | STMicroelectronics |
| 描述 | SILICON NPN TRANSISTORS |
| 页数 / 页 | 4 / 1 — 2N3439. 2N3440. DESCRIPTION. TO-39. INTERNAL SCHEMATIC DIAGRAM. ABSOLUTE … |
| 文件格式/大小 | PDF / 48 Kb |
| 文件语言 | 英语 |
2N3439. 2N3440. DESCRIPTION. TO-39. INTERNAL SCHEMATIC DIAGRAM. ABSOLUTE MAXIMUM RATINGS. Symbol. Parameter. Value. Unit
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文件文字版本
2N3439
®
2N3440
SILICON NPN TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES ■ NPN TRANSISTOR
DESCRIPTION
The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators.
TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3439 2N3440
VCBO Collector-Base Voltage (IE = 0) 450 300 V VCEO Collector-Emitter Voltage (IB = 0) 350 250 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 1 A IB Base Current 0.5 A Ptot Total Dissipation at Tc ≤ 25 oC 10 W Ptot Total Dissipation at Tamb ≤ 50 oC 1 W Tstg Storage Temperature -65 to 200 oC Tj Max. Operating Junction Temperature 200 oC December 2000 1/4
®
2N3440
SILICON NPN TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES ■ NPN TRANSISTOR
DESCRIPTION
The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators.
TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3439 2N3440
VCBO Collector-Base Voltage (IE = 0) 450 300 V VCEO Collector-Emitter Voltage (IB = 0) 350 250 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 1 A IB Base Current 0.5 A Ptot Total Dissipation at Tc ≤ 25 oC 10 W Ptot Total Dissipation at Tamb ≤ 50 oC 1 W Tstg Storage Temperature -65 to 200 oC Tj Max. Operating Junction Temperature 200 oC December 2000 1/4