TIPL762, TIPL762ANPN SILICON POWER TRANSISTORSTYPICAL CHARACTERISTICSCOLLECTOR CUT-OFF CURRENTvsCASE TEMPERATURE TCP762AF 10At - µ n1·0rreff CuTIPL762At-oV = 1000 VCE0·1r Cu to c lleTIPL762 V = 850 VCE- Co S 0·01 I CE E 0·001-80 -60 -40 -20020406080 100 120 140T - Case Temperature - °CCFigure 7.MAXIMUM SAFE OPERATING REGIONSMAXIMUM FORWARD-BIASSAFE OPERATING AREA SAP762AB 100 OBSOLET 10t - A n rrer Cu to1·0c lle- Co I C0.1t = 100 µ spt = 1 mspt = 10 mspTIPL762DC OperationTIPL762A0·011·0101001000V - Collector-Emitter Voltage - VCEFigure 8. AUGUST 1978 - REVISED SEPTEMBER 2002 5 Specifications are subject to change without notice.