Datasheet BSS89 (Infineon) - 7
| 制造商 | Infineon |
| 描述 | SIPMOS Small-Signal-Transistor |
| 页数 / 页 | 8 / 7 — Rev. 2.2. BSP89. 13 Typ. gate charge. 14 Drain-source breakdown voltage |
| 修订版 | 02_02 |
| 文件格式/大小 | PDF / 668 Kb |
| 文件语言 | 英语 |
Rev. 2.2. BSP89. 13 Typ. gate charge. 14 Drain-source breakdown voltage
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Rev. 2.2 BSP89 13 Typ. gate charge 14 Drain-source breakdown voltage
VGS = f (QG); parameter: VDS , V(BR)DSS = f (Tj) ID = 0.35 A pulsed, Tj = 25 °C BSP89 BSP89 16 291 V V 276 12 271 GS 266 10 (BR)DSS V V 261 0.2 VDS max 256 8 0.5 VDS max 251 246 6 0.8 VDS max 241 4 236 231 2 226 221 0 216 0 1 2 3 4 5 nC 6.5 -60 -20 20 60 100 °C 180 QG Tj Page 7 2012-11-29
VGS = f (QG); parameter: VDS , V(BR)DSS = f (Tj) ID = 0.35 A pulsed, Tj = 25 °C BSP89 BSP89 16 291 V V 276 12 271 GS 266 10 (BR)DSS V V 261 0.2 VDS max 256 8 0.5 VDS max 251 246 6 0.8 VDS max 241 4 236 231 2 226 221 0 216 0 1 2 3 4 5 nC 6.5 -60 -20 20 60 100 °C 180 QG Tj Page 7 2012-11-29