Datasheet VBUS05M2-HT5 (Vishay) - 3

制造商Vishay
描述2-Line Low Capacitance, Bidirectional and Symmetrical (BiSy) ESD Protection Diode
页数 / 页5 / 3 — VBUS05M2-HT5. TYPICAL CHARACTERISTICS
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VBUS05M2-HT5. TYPICAL CHARACTERISTICS

VBUS05M2-HT5 TYPICAL CHARACTERISTICS

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VBUS05M2-HT5
www.vishay.com Vishay Semiconductors
TYPICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) Axis Title 120 10000 10 Rise time = 0.7 ns to 1 ns 9 100 8 7 80 1000 ) e 6 ) ne ne ne lin (% ine 60 (V 5 R 53 1st li 2nd li I ESD 2nd li 2nd 2nd l V 4 40 100 3 27 2 20 1 Pin 1 to 3 or pin 2 to 3 in both directions 0 10 0 -10 0 10 20 30 40 50 60 70 80 90 100 0.01 0.1 1 10 100 1000 10 000 20557 t (ns) 22887 I (µA) R 2nd line 2nd line Fig. 1 - ESD Discharge Current Wave Form Fig. 4 - Typical Reverse Voltage vs. Reverse Current acc. IEC 61000-4-2 (330 Ω/150 pF) Axis Title Axis Title 10000 25 10000 100 8 µs to 100 % Pin 1 to pin 3 or pin 2 to pin 3 in both directions 20 80 1000 1000 ) 15 ) ine 60 ne ne ne (% ine ne 20 µs to 50 % (V C 1st li 2nd l I PPM 2nd li V 1st li 2nd l 10 2nd li 40 100 100 20 5 Measured according IEC 61000-4-5 (8/20 µs - wave form) 0 10 0 10 0 10 20 30 40 0 1 2 3 4 5 20548 t (µs) 22818 I (A) PP 2nd line 2nd line Fig. 2 - 8/20 μs Peak Pulse Current Wave Form Fig. 5 - Typical Peak Clamping Voltage vs. Peak Pulse Current acc. IEC 61000-4-5 Axis Title 1 10000 60 f = 1 MHz Transmission line pulse (TLP): t = 100 ns 50 p 0.8 1000 40 0.6 ) (V ine ne ne ine (pF) P L 30 DC 1st li 2nd l C-T 0.4 2nd li 2nd l V 100 20 0.2 10 Pin 1 to pin 3 or pin 2 to pin 3 in both directions 0 10 0 0 1 2 3 4 5 6 0 10 20 30 22816 V (V) I (A) R 22819 TLP 2nd line 2nd line Fig. 3 - Typical Capacitance vs. Reverse Voltage Fig. 6 - Typical Peak Forward Voltage vs. Forward Current Rev. 1.3, 16-Mar-2021
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Document Number: 86166 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000