Datasheet AIS2IH (STMicroelectronics) - 7
| 制造商 | STMicroelectronics |
| 描述 | MEMS digital output motion sensor: high-performance 3-axis accelerometer for automobile applications |
| 页数 / 页 | 63 / 7 — AIS2IH. Electrical characteristics. 2.2. Table 4. Electrical … |
| 文件格式/大小 | PDF / 1.6 Mb |
| 文件语言 | 英语 |
AIS2IH. Electrical characteristics. 2.2. Table 4. Electrical characteristics. Symbol. Parameter. Test conditions. Min. Typ. (1). Max. Unit
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AIS2IH Electrical characteristics
3. Noise density is the same for all ODRs. Low-noise setting enabled. 4. RMS noise is the same for all ODRs. Low-noise setting disabled. 5. Max. values from design and characterization at ambient temperature (T = 25°C). 6. Values after factory calibration test and trimming at T = 25 °C. 7. Based on characterization data on a limited number of samples. Not measured during final test for production.
2.2 Electrical characteristics
@ Vdd = 3.0 V, T = -40 °C to +115 °C unless otherwise noted. The product is factory calibrated at 3.0 V.
Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. (1) Max. Unit
Vdd Supply voltage 1.62 3.0 3.6 V Vdd_IO I/O pins supply voltage(2) 1.62 Vdd+0.1 V Current consumption in @ ODR range 12.5 Hz - 1600 Hz, IddHR 140 180 µA High-Performance Mode(3)(4) 14-bit, @ Vdd = 3 V ODR 100 Hz, @ Vdd = 3 V 6.5 14 ODR 50 Hz, @ Vdd = 3 V 3.7 9.5 IddLP Current consumption in Low-Power Mode(4)(5) µA ODR 12.5 Hz, @ Vdd = 3 V 1.3 6.5 ODR 1.6 Hz, @ Vdd = 3 V 0.67 5.5 Idd_PD Current consumption in power-down(4) @ Vdd = 3 V 0.1 5 µA VIH Digital high-level input voltage 0.7*Vdd_IO V VIL Digital low-level input voltage 0.3*Vdd_IO V VOH Digital high-level output voltage IOH = 4 mA(6) Vdd_IO - 0.2 V V VOL Digital low-level output voltage IOL = 4 mA(6) 0.2 V V Top Operating temperature range -40 +115 °C 1. Typical specifications are not guaranteed. 2. It is possible to remove Vdd maintaining Vdd_IO without blocking the communication busses. In this condition the measurement chain is powered off. 3. Low-noise setting enabled. 4. Typical value of current consumption measured at T = 25 °C. 5. Low-Power Mode 1. Low-noise setting disabled. 6. 4 mA is the maximum driving capability, ie. the maximum DC current that can be sourced/sunk by the digital pad in order to guarantee the correct digital output voltage levels VOH and VOL.
DS12421
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Rev 4 page 7/63
Document Outline Features Applications Description 1 Block diagram and pin description 1.1 Block diagram 1.2 Pin description 2 Mechanical and electrical specifications 2.1 Mechanical characteristics 2.2 Electrical characteristics 2.3 Temperature sensor characteristics 2.4 Communication interface characteristics 2.4.1 SPI - serial peripheral interface 2.4.2 I²C - inter-IC control interface 2.5 Absolute maximum ratings 3 Terminology and functionality 3.1 Terminology 3.1.1 Sensitivity 3.1.2 Zero-g level offset 3.2 Functionality 3.2.1 Operating modes 3.2.2 Single data conversion on-demand mode 3.2.3 Self-test 3.2.4 Activity/Inactivity, stationary/motion detection functions 3.2.5 High tap/double-tap user configurability 3.2.6 Offset management 3.3 Sensing element 3.4 IC interface 3.5 Factory calibration 3.6 Temperature sensor 4 Application hints 5 Digital main blocks 5.1 Block diagram of filters 5.2 Data stabilization time vs. ODR/device setting 5.3 FIFO 5.3.1 Bypass mode 5.3.2 FIFO mode 5.3.3 Continuous mode 5.3.4 Continuous-to-FIFO mode 5.3.5 Bypass-to-Continuous mode 6 Digital interfaces 6.1 I²C serial interface 6.1.1 I²C operation 6.2 SPI bus interface 6.2.1 SPI read 6.2.2 SPI write 6.2.3 SPI read in 3-wire mode 7 Register mapping 8 Register description 8.1 OUT_T_L (0Dh) 8.2 OUT_T_H (0Eh) 8.3 WHO_AM_I (0Fh) 8.4 CTRL1 (20h) 8.5 CTRL2 (21h) 8.6 CTRL3 (22h) 8.7 CTRL4_INT1_PAD_CTRL (23h) 8.8 CTRL5_INT2_PAD_CTRL (24h) 8.9 CTRL6 (25h) 8.10 OUT_T (26h) 8.11 STATUS (27h) 8.12 OUT_X_L (28h) 8.13 OUT_X_H (29h) 8.14 OUT_Y_L (2Ah) 8.15 OUT_Y_H (2Bh) 8.16 OUT_Z_L (2Ch) 8.17 OUT_Z_H (2Dh) 8.18 FIFO_CTRL (2Eh) 8.19 FIFO_SAMPLES (2Fh) 8.20 TAP_THS_X (30h) 8.21 TAP_THS_Y (31h) 8.22 TAP_THS_Z (32h) 8.23 INT_DUR (33h) 8.24 WAKE_UP_THS (34h) 8.25 WAKE_UP_DUR (35h) 8.26 FREE_FALL (36h) 8.27 STATUS_DUP (37h) 8.28 WAKE_UP_SRC (38h) 8.29 TAP_SRC (39h) 8.30 SIXD_SRC (3Ah) 8.31 ALL_INT_SRC (3Bh) 8.32 X_OFS_USR (3Ch) 8.33 Y_OFS_USR (3Dh) 8.34 Z_OFS_USR (3Eh) 8.35 CTRL7 (3Fh) 9 Package information 9.1 Soldering information 9.2 LGA-12 package information 9.3 LGA-12 packing information Revision history Contents List of tables List of figures
AIS2IH Electrical characteristics
3. Noise density is the same for all ODRs. Low-noise setting enabled. 4. RMS noise is the same for all ODRs. Low-noise setting disabled. 5. Max. values from design and characterization at ambient temperature (T = 25°C). 6. Values after factory calibration test and trimming at T = 25 °C. 7. Based on characterization data on a limited number of samples. Not measured during final test for production.
2.2 Electrical characteristics
@ Vdd = 3.0 V, T = -40 °C to +115 °C unless otherwise noted. The product is factory calibrated at 3.0 V.
Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. (1) Max. Unit
Vdd Supply voltage 1.62 3.0 3.6 V Vdd_IO I/O pins supply voltage(2) 1.62 Vdd+0.1 V Current consumption in @ ODR range 12.5 Hz - 1600 Hz, IddHR 140 180 µA High-Performance Mode(3)(4) 14-bit, @ Vdd = 3 V ODR 100 Hz, @ Vdd = 3 V 6.5 14 ODR 50 Hz, @ Vdd = 3 V 3.7 9.5 IddLP Current consumption in Low-Power Mode(4)(5) µA ODR 12.5 Hz, @ Vdd = 3 V 1.3 6.5 ODR 1.6 Hz, @ Vdd = 3 V 0.67 5.5 Idd_PD Current consumption in power-down(4) @ Vdd = 3 V 0.1 5 µA VIH Digital high-level input voltage 0.7*Vdd_IO V VIL Digital low-level input voltage 0.3*Vdd_IO V VOH Digital high-level output voltage IOH = 4 mA(6) Vdd_IO - 0.2 V V VOL Digital low-level output voltage IOL = 4 mA(6) 0.2 V V Top Operating temperature range -40 +115 °C 1. Typical specifications are not guaranteed. 2. It is possible to remove Vdd maintaining Vdd_IO without blocking the communication busses. In this condition the measurement chain is powered off. 3. Low-noise setting enabled. 4. Typical value of current consumption measured at T = 25 °C. 5. Low-Power Mode 1. Low-noise setting disabled. 6. 4 mA is the maximum driving capability, ie. the maximum DC current that can be sourced/sunk by the digital pad in order to guarantee the correct digital output voltage levels VOH and VOL.
DS12421
-
Rev 4 page 7/63
Document Outline Features Applications Description 1 Block diagram and pin description 1.1 Block diagram 1.2 Pin description 2 Mechanical and electrical specifications 2.1 Mechanical characteristics 2.2 Electrical characteristics 2.3 Temperature sensor characteristics 2.4 Communication interface characteristics 2.4.1 SPI - serial peripheral interface 2.4.2 I²C - inter-IC control interface 2.5 Absolute maximum ratings 3 Terminology and functionality 3.1 Terminology 3.1.1 Sensitivity 3.1.2 Zero-g level offset 3.2 Functionality 3.2.1 Operating modes 3.2.2 Single data conversion on-demand mode 3.2.3 Self-test 3.2.4 Activity/Inactivity, stationary/motion detection functions 3.2.5 High tap/double-tap user configurability 3.2.6 Offset management 3.3 Sensing element 3.4 IC interface 3.5 Factory calibration 3.6 Temperature sensor 4 Application hints 5 Digital main blocks 5.1 Block diagram of filters 5.2 Data stabilization time vs. ODR/device setting 5.3 FIFO 5.3.1 Bypass mode 5.3.2 FIFO mode 5.3.3 Continuous mode 5.3.4 Continuous-to-FIFO mode 5.3.5 Bypass-to-Continuous mode 6 Digital interfaces 6.1 I²C serial interface 6.1.1 I²C operation 6.2 SPI bus interface 6.2.1 SPI read 6.2.2 SPI write 6.2.3 SPI read in 3-wire mode 7 Register mapping 8 Register description 8.1 OUT_T_L (0Dh) 8.2 OUT_T_H (0Eh) 8.3 WHO_AM_I (0Fh) 8.4 CTRL1 (20h) 8.5 CTRL2 (21h) 8.6 CTRL3 (22h) 8.7 CTRL4_INT1_PAD_CTRL (23h) 8.8 CTRL5_INT2_PAD_CTRL (24h) 8.9 CTRL6 (25h) 8.10 OUT_T (26h) 8.11 STATUS (27h) 8.12 OUT_X_L (28h) 8.13 OUT_X_H (29h) 8.14 OUT_Y_L (2Ah) 8.15 OUT_Y_H (2Bh) 8.16 OUT_Z_L (2Ch) 8.17 OUT_Z_H (2Dh) 8.18 FIFO_CTRL (2Eh) 8.19 FIFO_SAMPLES (2Fh) 8.20 TAP_THS_X (30h) 8.21 TAP_THS_Y (31h) 8.22 TAP_THS_Z (32h) 8.23 INT_DUR (33h) 8.24 WAKE_UP_THS (34h) 8.25 WAKE_UP_DUR (35h) 8.26 FREE_FALL (36h) 8.27 STATUS_DUP (37h) 8.28 WAKE_UP_SRC (38h) 8.29 TAP_SRC (39h) 8.30 SIXD_SRC (3Ah) 8.31 ALL_INT_SRC (3Bh) 8.32 X_OFS_USR (3Ch) 8.33 Y_OFS_USR (3Dh) 8.34 Z_OFS_USR (3Eh) 8.35 CTRL7 (3Fh) 9 Package information 9.1 Soldering information 9.2 LGA-12 package information 9.3 LGA-12 packing information Revision history Contents List of tables List of figures