Datasheet SUB15P01-52 (Vishay) - 2

SUP/SUB15P01-52 Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –250 mA –8 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA –0.45 Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA VDS = –6.4 V, VGS = 0 V –1 Zero Gate Voltage Drain Current I V DSS DS = –6.4 V, VGS = 0 V, TJ = 125_C –50 mA m VDS = –6.4 V, VGS = 0 V, TJ = 175_C –150 VDS = –5 V, VGS = –4.5 V –25 On-State Drain Currenta ID(on) A VDS = –5 V, VGS = –2.5 V –10 VGS = –4.5 V, ID = –10 A 0.043 0.052 VGS = –4.5 V, ID = –10 A, TJ = 125_C 0.065 Drain-Source On-State Resistancea r V DS(on) GS = –4.5 V, ID = –10 A, TJ = 175_C 0.075 W VGS = –2.5 V, ID = –5 A 0.070 VGS = –1.8 V, ID = –2 A 0.105 Forward Transconductancea gfs VDS = –5 V, ID = –10 A 16 S
Dynamicb
Input Capacitance Ciss 1300 Output Capacitance Coss VGS = 0 V, VDS = –4 V, f = 1 MHz 430 pF Reversen Transfer Capacitance Crss 245 Total Gate Chargec Qg 10.5 15 Gate-Source Chargec Qgs VDS = –4 V, V GS = –4.5 V, I GS D = –10 A 1.6 nC D Gate-Drain Chargec Qgd 2 Turn-On Delay Timec td(on) 10 20 Rise Timec tr VDD V = –4 V, R DD = –4 V, L R = 0.22 L W 16 25 = 0.22 W ns Turn-Off Delay Timec td(off) ID D ] –15 A, VGEN = –4.5 V, R N G = 2.5 G W 30 45 Fall Timec tf 25 40
Source-Drain Diode Ratings and Characteristics (TC = 25
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C)b
Continuous Current Is –15 A Pulsed Current ISM –25 Forward Voltagea VSD IF = –15 A, VGS = 0 V –1.5 V Reverse Recovery Time trr 45 75 ns Peak Reverse Recovery Current IRM(REC) IF = –15 A, di/dt = 100 A/ F ms –1 –1.5 A Reverse Recovery Charge Qrr 0.023 0.056 mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com Document Number: 71085
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S-20966—Rev. C, 01-Jul-02 Document Outline Datasheet Disclaimer Datasheet Disclaimer