Datasheet SUB15P01-52 (Vishay) - 3

SUP/SUB15P01-52 Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
60 20 4.5 V TC = –55_C 4 V 25_C 48 16 3.5 V 125_C 36 12 3 V 24 2.5 V 8 Drain Current (A) Drain Current (A) – – D 2 V D I I 12 4 1.5 V 1 V 0 0 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
25 0.20 TC = –55_C 20 0.16 ) 25_C W (S) 125_C 15 0.12 VGS = 1.8 V 10 0.08 VGS = 2.5 V On-Resistance ( ransconductance – T – VGS = 4.5 V fs 5 0.04 g r DS(on) 0 0.00 0 5 10 15 20 25 0 5 10 15 20 25 VGS – Gate-to-Source Voltage (V) ID – Drain Current (A)
Capacitance Gate Charge
2000 8 VDS = 4 V 1600 ID = 10 A 6 Ciss oltage (V) 1200 4 800 Capacitance (pF) – C C oss Gate-to-Source V – 2 400 GS C V rss 0 0 0 2 4 6 8 0 4 8 12 16 20 V Q DS – Drain-to-Source Voltage (V) g – Total Gate Charge (nC) Document Number: 71085 www.vishay.com S-20966—Rev. C, 01-Jul-02
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