Datasheet SD101AW, SD101BW, SD101CW (Vishay) - 2

SD101AW, SD101BW, SD101CW
www.vishay.com Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
SD101AW V(BR) 60 V Reverse breakdown voltage IR = 10 μA SD101BW V(BR) 50 V SD101CW V(BR) 40 V VR = 50 V SD101AW IR 200 nA Leakage current VR = 40 V SD101BW IR 200 nA VR = 30 V SD101CW IR 200 nA SD101AW VF 410 mV IF = 1 mA SD101BW VF 400 mV SD101CW VF 390 mV Forward voltage drop SD101AW VF 1000 mV IF = 15 mA SD101BW VF 950 mV SD101CW VF 900 mV SD101AW CD 2 pF Diode capacitance VR = 0 V, f = 1 MHz SD101BW CD 2.1 pF SD101CW CD 2.2 pF Reverse recovery time IF = IR = 5 mA, recover to 0.1 IR trr 1 ns
TYPICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) 10 100 A B 125 °C C 10 (µA) 100 °C (mA) 1 Current 1 75 °C Current 0.1 50 °C Reverse 0.1 Forward - I R I - F 25 °C 0.01 0.01 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50 18479 V 18477 VF - Forward Voltage (V) R - Reverse Voltage (V) Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage Fig. 3 - Typical Variation of Reverse Current at Various Temperatures 100 2.0 A Tj = 25 °C B 1.8 C 80 1.6 1.4 60 1.2 A B C 1.0 apacitance (pF) C 40 0.8 0.6 Forward Current (mA) Typical - F 20 0.4 I - D C 0.2 0 0 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50 18478 VF - Forward Voltage (V) 18480 VR - Reverse Voltage (V) Fig. 2 - Typical Forward Conduction Curve Fig. 4 - Typical Capacitance Curve as a Function of Reverse Voltage Rev. 1.9, 23-Feb-18
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