Datasheet BUK7S0R5-40H (Nexperia)
| 制造商 | Nexperia |
| 描述 | N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88 |
| 页数 / 页 | 13 / 1 — BUK7S0R5-40H. N-channel 40 V, 0.5 mOhm standard level MOSFET in. LFPAK88. … |
| 修订版 | 06042021 |
| 文件格式/大小 | PDF / 326 Kb |
| 文件语言 | 英语 |
BUK7S0R5-40H. N-channel 40 V, 0.5 mOhm standard level MOSFET in. LFPAK88. 6 April 2021. Product data sheet
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BUK7S0R5-40H N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88 6 April 2021 Product data sheet 1. General description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been ful y designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability.
2. Features and benefits
• Fully automotive qualified to beyond AEC-Q101: • -55 °C to +175 °C rating suitable for thermally demanding environments • LFPAK88 package: • Designed for smaller footprint and improved power density over older wire bond packages such as D²PAK for today’s space constrained high power automotive applications • Thin package and copper clip enables LFPAK88 to be highly ef icient thermal y • LFPAK copper clip technology enabling improvements over wire bond packages by: • Increased maximum current capability and excellent current spreading • Improved RDSon • Low source inductance • Low thermal resistance Rth • LFPAK Gul Wing leads: • Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal cycling stress, unlike traditional QFN packages • Visual (AOI) soldering inspection, no need for expensive x-ray equipment • Easy solder wetting for good mechanical solder joint • Unique 40 V Trench 9 superjunction technology: • Reduced cell pitch and superjunction platform enables lower RDSon in the same footprint • Improved SOA and avalanche capability compared to standard TrenchMOS • Tight VGS(th) limits enable easy paral eling of MOSFETs
3. Applications
• 12 V automotive systems • 48 V DC/DC systems (on 12 V secondary side) • Higher power motors, lamps and solenoid control • Reverse polarity protection • Ultra high performance power switching
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 40 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - - 500 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 375 W Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
BUK7S0R5-40H N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88 6 April 2021 Product data sheet 1. General description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been ful y designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability.
2. Features and benefits
• Fully automotive qualified to beyond AEC-Q101: • -55 °C to +175 °C rating suitable for thermally demanding environments • LFPAK88 package: • Designed for smaller footprint and improved power density over older wire bond packages such as D²PAK for today’s space constrained high power automotive applications • Thin package and copper clip enables LFPAK88 to be highly ef icient thermal y • LFPAK copper clip technology enabling improvements over wire bond packages by: • Increased maximum current capability and excellent current spreading • Improved RDSon • Low source inductance • Low thermal resistance Rth • LFPAK Gul Wing leads: • Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal cycling stress, unlike traditional QFN packages • Visual (AOI) soldering inspection, no need for expensive x-ray equipment • Easy solder wetting for good mechanical solder joint • Unique 40 V Trench 9 superjunction technology: • Reduced cell pitch and superjunction platform enables lower RDSon in the same footprint • Improved SOA and avalanche capability compared to standard TrenchMOS • Tight VGS(th) limits enable easy paral eling of MOSFETs
3. Applications
• 12 V automotive systems • 48 V DC/DC systems (on 12 V secondary side) • Higher power motors, lamps and solenoid control • Reverse polarity protection • Ultra high performance power switching
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 40 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - - 500 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 375 W Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents