Datasheet MMBT2369L, MMBT2369AL (ON Semiconductor) - 4
| 制造商 | ON Semiconductor |
| 描述 | Switching Transistors NPN Silicon |
| 页数 / 页 | 7 / 4 — MMBT2369L, MMBT2369AL. Figure 6. Junction Capacitance Variations. Figure … |
| 修订版 | 11 |
| 文件格式/大小 | PDF / 203 Kb |
| 文件语言 | 英语 |
MMBT2369L, MMBT2369AL. Figure 6. Junction Capacitance Variations. Figure 7. Typical Switching Times
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MMBT2369L, MMBT2369AL
6 100 LIMIT 5 TJ = 25°C βF = 10 TYPICAL V 50 CC = 10 V 4 VOB = 2 V C (nsec) ib t tf 3 C r (VCC = 3 V) ob 20 VCC = 10 V t ANCE (pF) r ACIT 10 2 CAP SWITCHING TIMES 5 ts td 1 2 0.1 0.2 0.5 1.0 2.0 5.0 10 1 2 5 10 20 50 100 REVERSE BIAS (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 6. Junction Capacitance Variations Figure 7. Typical Switching Times
t 980 C < C +6 V 1 10 V OPT C = 0 0 C C -4 V OPT < 1 ns 500 Cs* < 3 pF PULSE WIDTH (t1) = 300 ns TIME DUTY CYCLE = 2%
Figure 8. Turn−Off Waveform Figure 9. Storage Time Equivalent Test Circuit
TS) 1.0 TAGE (VOL TJ = 25°C 0.8 IC = 3 mA IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA 0.6 OR-EMITTER VOL 0.4 0.2 , MAXIMUM COLLECT 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 CEV IB, BASE CURRENT (mA)
Figure 10. Maximum Collector Saturation Voltage Characteristics www.onsemi.com 4
6 100 LIMIT 5 TJ = 25°C βF = 10 TYPICAL V 50 CC = 10 V 4 VOB = 2 V C (nsec) ib t tf 3 C r (VCC = 3 V) ob 20 VCC = 10 V t ANCE (pF) r ACIT 10 2 CAP SWITCHING TIMES 5 ts td 1 2 0.1 0.2 0.5 1.0 2.0 5.0 10 1 2 5 10 20 50 100 REVERSE BIAS (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 6. Junction Capacitance Variations Figure 7. Typical Switching Times
t 980 C < C +6 V 1 10 V OPT C = 0 0 C C -4 V OPT < 1 ns 500 Cs* < 3 pF PULSE WIDTH (t1) = 300 ns TIME DUTY CYCLE = 2%
Figure 8. Turn−Off Waveform Figure 9. Storage Time Equivalent Test Circuit
TS) 1.0 TAGE (VOL TJ = 25°C 0.8 IC = 3 mA IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA 0.6 OR-EMITTER VOL 0.4 0.2 , MAXIMUM COLLECT 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 CEV IB, BASE CURRENT (mA)
Figure 10. Maximum Collector Saturation Voltage Characteristics www.onsemi.com 4