Datasheet UF3C065080B7S (UnitedSiC) - 3

Electrical Characteristics (TJ = +25°C unless otherwise specified) Typical Performance - Static Value Parameter Symbol Test Conditions Units Min Typ Max Drain-source breakdown voltage BVDS VGS=0V, ID=1mA 650 V VDS=650V, 1.3 100 VGS=0V, TJ=25°C Total drain leakage current IDSS mA VDS=650V, 10 VGS=0V, TJ=175°C V Total gate leakage current I DS=0V, TJ=25°C, GSS 6 20 mA VGS=-20V / +20V VGS=12V, ID=20A, 85 105 TJ=25°C VGS=12V, ID=20A, Drain-source on-resistance RDS(on) 116 mW TJ=125°C VGS=12V, ID=20A, 146 TJ=175°C Gate threshold voltage VG(th) VDS=5V, ID=10mA 4 4.8 6 V Gate resistance RG f=1MHz, open drain 4.2 W Typical Performance - Reverse Diode Value Parameter Symbol Test Conditions Units Min Typ Max Diode continuous forward current 1 IS TC=25°C 27 A Diode pulse current 2 IS,pulse TC=25°C 65 A VGS=0V, IF=10A, 1.54 2 T Forward voltage V J=25°C FSD V VGS=0V, IF=10A, 1.85 TJ=175°C V Reverse recovery charge Q R=400V, IF=20A, rr 69 nC VGS=-5V, RG_EXT=22W di/dt=2000A/ms, Reverse recovery time trr T 21 ns J=25°C V Reverse recovery charge Q R=400V, IF=20A, rr 66 nC VGS=-5V, RG_EXT=22W di/dt=2000A/ms, Reverse recovery time trr T 19 ns J=150°C Datasheet: UF3C065080B7S Rev. A, November 2020 3