Datasheet UF3SC065030B7S (UnitedSiC) - 6

制造商UnitedSiC
描述650V-27mW SiC FET
页数 / 页10 / 6 — 100. 150. Tj. =. 175°C. Tj. =. -55°C. ). 125. W. 80. Tj. =. 25°C. Tj. =. …
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100. 150. Tj. =. 175°C. Tj. =. -55°C. ). 125. W. 80. Tj. =. 25°C. Tj. =. 25°C. (m. Tj. =. -. 55°C. ). Tj. =. 175°C. n). A(. o. 100. (S. 60. I. ,. D. R. D. ,. nt. ec. er. 75. r. ant. 40. Cu. is. s. n. 50. e. ai. R. r. -. 20. D. On. 25. 0. 0. 0

100 150 Tj = 175°C Tj = -55°C ) 125 W 80 Tj = 25°C Tj = 25°C (m Tj = - 55°C ) Tj = 175°C n) A( o 100 (S 60 I , D R D , nt ec er 75 r ant 40 Cu is s n 50 e ai R r - 20 D On 25 0 0 0

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100 150 Tj = 175°C Tj = -55°C ) 125 W 80 Tj = 25°C Tj = 25°C (m Tj = - 55°C ) Tj = 175°C n) A( o 100 (S 60 I , D R D , nt ec er 75 r ant 40 Cu is s n 50 e ai R r - 20 D On 25 0 0 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 10 Drain Current, ID (A) Gate-Source Voltage, VGS (V) Figure 5. Typical drain-source on-resistances at VGS = Figure 6. Typical transfer characteristics at VDS = 5V 12V 6 20 ) 5 V V ( 15 V th V GS , 4 , e e g g 10 lta lta o 3 o V V d ec ol r 5 h 2 s ou e S r - Th te 0 1 Ga 0 -5 -100 -50 0 50 100 150 200 0 10 20 30 40 50 60 Junction Temperature, TJ (°C) Gate Charge, QG (nC) Figure 7. Threshold voltage vs. junction temperature Figure 8. Typical gate charge at VDS = 400V and ID = at VDS = 5V and ID = 10mA 40A Datasheet: UF3SC065030B7S Rev. A, December 2020 6