Datasheet UF3SC065030B7S (UnitedSiC) - 8

制造商UnitedSiC
描述650V-27mW SiC FET
页数 / 页10 / 8 — 10,000. 70. C. 60. iss. ). A. 1,000. (. pF. I. D. 50. (. t,. C. n. ,. C. …
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10,000. 70. C. 60. iss. ). A. 1,000. (. pF. I. D. 50. (. t,. C. n. ,. C. e. e. oss. rr. 40. nc. 100. Cu. ita. n. 30. ac. ai. p. r. D. Ca. C. 20. 10. D. C. 10. rss. 1. 0. 0. 100. 200. 300. 400. 500. 600. -75. -50. -25. 0. 25. 50. 75. 100

10,000 70 C 60 iss ) A 1,000 ( pF I D 50 ( t, C n , C e e oss rr 40 nc 100 Cu ita n 30 ac ai p r D Ca C 20 10 D C 10 rss 1 0 0 100 200 300 400 500 600 -75 -50 -25 0 25 50 75 100

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10,000 70 C 60 iss ) A 1,000 ( pF I D 50 ( t, C n , C e e oss rr 40 nc 100 Cu ita n 30 ac ai p r D Ca C 20 10 D C 10 rss 1 0 0 100 200 300 400 500 600 -75 -50 -25 0 25 50 75 100 125 150 175 Drain-Source Voltage, VDS (V) Case Temperature, TC (°C) Figure 13. Typical capacitances at f = 100kHz and VGS Figure 14. DC drain current derating = 0V 250 1 ) W( 200 /W C ot °( P t ,n JC 0.1 io 150 Z q , D = 0.5 at e ip nc D = 0.3 ss a i 100 d D = 0.1 D r D = 0.05 e mpe 0.01 I w l o a D = 0.02 P 50 mre D = 0.01 Th Single Pulse 0 0.001 -75 -50 -25 0 25 50 75 100 125 150 175 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 Case Temperature, TC (°C) Pulse Time, tp (s) Figure 15. Total power dissipation Figure 16. Maximum transient thermal impedance Datasheet: UF3SC065030B7S Rev. A, December 2020 8