Datasheet UF3SC120040B7S (UnitedSiC) - 8

制造商UnitedSiC
描述1200V-35mW SiC FET
页数 / 页10 / 8 — 10,000. 50. 45. Ciss. ). A. 40. ). 1,000. (. pF. I. D. (. 35. t,. C. n. …
文件格式/大小PDF / 438 Kb
文件语言英语

10,000. 50. 45. Ciss. ). A. 40. ). 1,000. (. pF. I. D. (. 35. t,. C. n. ,. e. e. 30. r. C. r. nc. 100. oss. 25. Cu. ita. n. ac. ai. 20. p. r. D. Ca. 15. 10. C. D. 10. Crss. 5. 1. 0. 0. 200. 400. 600. 800. 1000. 1200. -75. -50. -25. 0. 25

10,000 50 45 Ciss ) A 40 ) 1,000 ( pF I D ( 35 t, C n , e e 30 r C r nc 100 oss 25 Cu ita n ac ai 20 p r D Ca 15 10 C D 10 Crss 5 1 0 0 200 400 600 800 1000 1200 -75 -50 -25 0 25

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10,000 50 45 Ciss ) A 40 ) 1,000 ( pF I D ( 35 t, C n , e e 30 r C r nc 100 oss 25 Cu ita n ac ai 20 p r D Ca 15 10 C D 10 Crss 5 1 0 0 200 400 600 800 1000 1200 -75 -50 -25 0 25 50 75 100 125 150 175 Drain-Source Voltage, VDS (V) Case Temperature, TC (°C) Figure 13. Typical capacitances at f = 100kHz and VGS Figure 14. DC drain current derating = 0V 250 1 ) W( 200 /W C ot °( P t ,n JC 0.1 io 150 Z q , D = 0.5 at e ip nc D = 0.3 ss a i 100 d D = 0.1 D r D = 0.05 e mpe 0.01 I w l o a D = 0.02 P 50 mre D = 0.01 Th Single Pulse 0 0.001 -75 -50 -25 0 25 50 75 100 125 150 175 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 Case Temperature, TC (°C) Pulse Time, tp (s) Figure 15. Total power dissipation Figure 16. Maximum transient thermal impedance Datasheet: UF3SC120040B7S Rev. A, December 2020 8