Datasheet 2N3819 (ON Semiconductor)
| 制造商 | ON Semiconductor |
| 描述 | N-Channel RF Amplifier |
| 页数 / 页 | 3 / 1 — 2N38. 2N3819. N-Channel RF Amplifier. Epitaxial Silicon Transistor. … |
| 文件格式/大小 | PDF / 57 Kb |
| 文件语言 | 英语 |
2N38. 2N3819. N-Channel RF Amplifier. Epitaxial Silicon Transistor. Absolute Maximum Ratings*. Symbol. Parameter. Ratings. Units. NOTES:
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2N38 19 2N3819 N-Channel RF Amplifier
• This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source
Epitaxial Silicon Transistor Absolute Maximum Ratings*
TC=25°C unless otherwise noted
Symbol Parameter Ratings Units
VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V ID Drain Current 50 mA IGF Forward Gate Current 10 mA TSTG Storage Temperature Range -55 ~ 150 °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics
V(BR)GSS Gate-Source Breakdwon Voltage IG = 1.0µA, VDS = 0 25 V IGSS Gate Reverse Current VGS = -15V, VDS = 0 2.0 nA VGS(off) Gate-Source Cutoff Voltage VDS = 15V, ID = 2.0nA 8.0 V VGS Gate-Source Voltage VDS = 15V, ID = 200µA -0.5 -7.5 V
On Characteristics
IDSS Zero-Gate Voltage Drain Current VDS = 15V, VGS = 0 2.0 20 mA
Small Signal Characteristics
gfs Forward Transfer Conductance VDS = 15V, VGS = 0, f = 1.0KHz 2000 6500 µmhos goss Output Conductance VDS= 15V, VGS = 0, f = 1.0KHz 50 µmhos yfs Forward Transfer Admittance VDS= 15V, VGS = 0, f = 1.0KHz 1600 µmhos Ciss Input Capacitance VDS = 15V, VGS = 0, f = 1.0KHz 8.0 pF Crss Reverse Transfer Capacitance VDS = 15V, VGS = 0, f = 1.0KHz 4.0 pF
Thermal Characteristics
TA=25°C unless otherwise noted
Symbol Parameter Max. Units
PD Total Device Dissipation 350 mW Derate above 25°C 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W * Device mounted on FR-4 PCB 1.5” × 1.6” × 0.06” ©2002 Fairchild Semiconductor Corporation Rev. A1, December 2002
2N38 19 2N3819 N-Channel RF Amplifier
• This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source
Epitaxial Silicon Transistor Absolute Maximum Ratings*
TC=25°C unless otherwise noted
Symbol Parameter Ratings Units
VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V ID Drain Current 50 mA IGF Forward Gate Current 10 mA TSTG Storage Temperature Range -55 ~ 150 °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics
V(BR)GSS Gate-Source Breakdwon Voltage IG = 1.0µA, VDS = 0 25 V IGSS Gate Reverse Current VGS = -15V, VDS = 0 2.0 nA VGS(off) Gate-Source Cutoff Voltage VDS = 15V, ID = 2.0nA 8.0 V VGS Gate-Source Voltage VDS = 15V, ID = 200µA -0.5 -7.5 V
On Characteristics
IDSS Zero-Gate Voltage Drain Current VDS = 15V, VGS = 0 2.0 20 mA
Small Signal Characteristics
gfs Forward Transfer Conductance VDS = 15V, VGS = 0, f = 1.0KHz 2000 6500 µmhos goss Output Conductance VDS= 15V, VGS = 0, f = 1.0KHz 50 µmhos yfs Forward Transfer Admittance VDS= 15V, VGS = 0, f = 1.0KHz 1600 µmhos Ciss Input Capacitance VDS = 15V, VGS = 0, f = 1.0KHz 8.0 pF Crss Reverse Transfer Capacitance VDS = 15V, VGS = 0, f = 1.0KHz 4.0 pF
Thermal Characteristics
TA=25°C unless otherwise noted
Symbol Parameter Max. Units
PD Total Device Dissipation 350 mW Derate above 25°C 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W * Device mounted on FR-4 PCB 1.5” × 1.6” × 0.06” ©2002 Fairchild Semiconductor Corporation Rev. A1, December 2002