Datasheet FDS7788 (Fairchild) - 4
| 制造商 | Fairchild |
| 描述 | 30V N-Channel PowerTrench MOSFET |
| 页数 / 页 | 5 / 4 — FDS. Typical Characteristics. 7788. CAPACITANCE (pF). , GATE-SOURCE … |
| 文件格式/大小 | PDF / 115 Kb |
| 文件语言 | 英语 |
FDS. Typical Characteristics. 7788. CAPACITANCE (pF). , GATE-SOURCE VOLTAGE (V). GSV. g, GATE CHARGE (nC)
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FDS Typical Characteristics 7788
10 5000 f = 1MHz I = 10V D = 18A VDS V 15V GS = 0 V 8 4000 CISS 20V 6 3000 4 2000
CAPACITANCE (pF)
COSS 2
, GATE-SOURCE VOLTAGE (V)
1000
GSV
CRSS 0 0 0 20 40 60 80 0 5 10 15 20 25 30
Q V g, GATE CHARGE (nC) DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100 50 SINGLE PULSE 100µs R R DS(ON) LIMIT θJA = 125°C/W 1ms 40 TA = 25°C 10 10ms 100ms 30 1s 10s 1 DC 20 VGS = 10V
, DRAIN CURRENT (A)
SINGLE PULSE
I D
0.1 o 10 RθJA = 125 C/W o TA = 25 C
P(pk), PEAK TRANSIENT POWER (W)
0 0.01 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100
t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation.
1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 Rθ 0.1 JA = 125oC/W 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) SINGLE PULSE Duty Cycle, D = t1 / t2
r(t), NORMALIZED EFFECTIVE ANSIENT THERMAL RESISTANCE
0.001
TR
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS7788 Rev F(W)
10 5000 f = 1MHz I = 10V D = 18A VDS V 15V GS = 0 V 8 4000 CISS 20V 6 3000 4 2000
CAPACITANCE (pF)
COSS 2
, GATE-SOURCE VOLTAGE (V)
1000
GSV
CRSS 0 0 0 20 40 60 80 0 5 10 15 20 25 30
Q V g, GATE CHARGE (nC) DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100 50 SINGLE PULSE 100µs R R DS(ON) LIMIT θJA = 125°C/W 1ms 40 TA = 25°C 10 10ms 100ms 30 1s 10s 1 DC 20 VGS = 10V
, DRAIN CURRENT (A)
SINGLE PULSE
I D
0.1 o 10 RθJA = 125 C/W o TA = 25 C
P(pk), PEAK TRANSIENT POWER (W)
0 0.01 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100
t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation.
1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 Rθ 0.1 JA = 125oC/W 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) SINGLE PULSE Duty Cycle, D = t1 / t2
r(t), NORMALIZED EFFECTIVE ANSIENT THERMAL RESISTANCE
0.001
TR
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS7788 Rev F(W)