Datasheet FFB2227A, FMB2227A (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | NPN & PNP General Purpose Amplifier |
| 页数 / 页 | 6 / 2 — F FB2227. Absolute Maximum Ratings. A / FMB2227A — NPN & PN. Symbol. … |
| 修订版 | 2 |
| 文件格式/大小 | PDF / 318 Kb |
| 文件语言 | 英语 |
F FB2227. Absolute Maximum Ratings. A / FMB2227A — NPN & PN. Symbol. Parameter. Value. Units. Notes:. P General-Purpose Amplifier
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文件文字版本
F FB2227 Absolute Maximum Ratings
(1) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
A / FMB2227A — NPN & PN
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 500 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 to +150 °C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
P General-Purpose Amplifier
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty cycle operations. 3. All voltages (V) and currents (A) are negative polarity for PNP transistors. 4. These Ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
(2) Values are at TA = 25°C unless otherwise noted.
Maximum Symbol Parameter Units FFB2227A FMB2227A
Total Device Dissipation 300 700 mV PD Derate Above 25°C 2.4 5.6 mV/°C RθJA Thermal Resistance, Junction to Ambient 415 180 °C/W
Note:
2. PCB board size: FR-4 76 x 114 x 0.6T mm3(3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. www.onsemi.com 2
(1) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
A / FMB2227A — NPN & PN
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 500 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 to +150 °C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
P General-Purpose Amplifier
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty cycle operations. 3. All voltages (V) and currents (A) are negative polarity for PNP transistors. 4. These Ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
(2) Values are at TA = 25°C unless otherwise noted.
Maximum Symbol Parameter Units FFB2227A FMB2227A
Total Device Dissipation 300 700 mV PD Derate Above 25°C 2.4 5.6 mV/°C RθJA Thermal Resistance, Junction to Ambient 415 180 °C/W
Note:
2. PCB board size: FR-4 76 x 114 x 0.6T mm3(3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. www.onsemi.com 2