Datasheet GMICP2731-10 (Microchip) - 3

GMICP2731-10 Electrical Specifications 1. Electrical Specifications 1.1 Typical Electrical Performance Table 1-1. Electrical Specifications Parameter Min Typical Max Units Conditions(1)
Frequency Range 27.5 31 GHz Saturated Output Power, Psat 37 39.5 dBm Pin = 24 dBm Power Added Efficiency, PAE 22 % Pin = 24 dBm Small Signal Gain, S21 22 dB Input Return Loss –15 dB Output Return Loss –15 dB Power Detector Range 20 39 dBm Temperature reference diode provided (1) Test conditions unless otherwise stated CW, VD = 24V, IDQ = 110 mA ,VG~ –1.84V typical, TA = 25 ºC
Table 1-2. Recommended Operating Conditions Parameters Value
Drain Voltage (VD) 20V – 24V Drain Quiescent Current (IDQ) 100 mA – 224 mA Gate Voltage Range (VG) –2V to –1.5V Operating Temperature (TA) –40 °C to +85 °C
1.2 Absolute Maximum Ratings Table 1-3. Thermal and Reliability Parameters Value
Thermal Resistance 4.9 ºC/W
Notes
1. Assumes silver sintered epoxy attach (15 µm thick) mounted on CuMo carrier. 2. Base temperature is assumed at the top of the CuMo carrier 3. Thermal resistance calculated using IR measurement of the channel temperature
Table 1-4. Absolute Maximum Ratings Parameters Absolute Maximum
Drain Voltage (VDG) 32V Gate Voltage Range (VG –5V to 0V © 2021 Microchip Technology Inc.
Datasheet
DS-00004072A-page 3 and its subsidiaries Document Outline Product Overview Table of Contents 1. Electrical Specifications 1.1. Typical Electrical Performance 1.2. Absolute Maximum Ratings 1.3. Typical RF Performance 1.3.1. Typical Small Signal Performance 1.3.2. Typical Power Performance 1.3.3. Typical 2-Tones RF Performance 2. Die Specifications 3. Application Circuits 4. Ordering, Shipping, and Handling 4.1. Handling Recommendations 4.2. Ordering Information 5. Revision History The Microchip Website Product Change Notification Service Customer Support Product Identification System Microchip Devices Code Protection Feature Legal Notice Trademarks Quality Management System Worldwide Sales and Service