Datasheet TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) (ON Semiconductor) - 5
| 制造商 | ON Semiconductor |
| 描述 | Plastic Medium-Power Complementary Silicon Transistors |
| 页数 / 页 | 8 / 5 — TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP). Figure 6. … |
| 修订版 | 9 |
| 文件格式/大小 | PDF / 296 Kb |
| 文件语言 | 英语 |
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP). Figure 6. Active−Region Safe Operating Area
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TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
20 There are two limitations on the power handling ability of 10 100 ms a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I 5.0 500 ms C − VCE (AMP) limits of the transistor that must be observed for reliable dc 2.0 T operation, i.e., the transistor must not be subjected to greater J = 150°C 1.0 BONDING WIRE LIMITED dissipation than the curves indicate. THERMALLY LIMITED 1ms The data of Figure 6 is based on T 0.5 J(pk) = 150°C; TC is OR CURRENT @ TC = 25°C (SINGLE PULSE) 5ms variable depending on conditions. Second breakdown pulse SECOND BREAKDOWN LIMITED 0.2 CURVES APPLY BELOW limits are valid for duty cycles to 10% provided TJ(pk) < 150°C. T , COLLECT 0.1 RATED VCEO J(pk) may be calculated from the data in Figure 5. I C TIP120, TIP125 0.05 At high case temperatures, thermal limitations will reduce TIP121, TIP126 the power that can be handled to values less than the TIP122, TIP127 0.02 limitations imposed by second breakdown 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Active−Region Safe Operating Area
10,000 300 T 5000 J = 25°C 3000 200 GAIN 2000 1000 Cob 500 T ANCE (pF) CURRENT C = 25°C 100 300 VCE = 4.0 Vdc 200 ACIT IC = 3.0 Adc 70 Cib 100 C, CAP 50 50 PNP , SMALL-SIGNAL 30 PNP NPN fe 20 h NPN 10 30 1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Small−Signal Current Gain Figure 8. Capacitance www.onsemi.com 5
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
20 There are two limitations on the power handling ability of 10 100 ms a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I 5.0 500 ms C − VCE (AMP) limits of the transistor that must be observed for reliable dc 2.0 T operation, i.e., the transistor must not be subjected to greater J = 150°C 1.0 BONDING WIRE LIMITED dissipation than the curves indicate. THERMALLY LIMITED 1ms The data of Figure 6 is based on T 0.5 J(pk) = 150°C; TC is OR CURRENT @ TC = 25°C (SINGLE PULSE) 5ms variable depending on conditions. Second breakdown pulse SECOND BREAKDOWN LIMITED 0.2 CURVES APPLY BELOW limits are valid for duty cycles to 10% provided TJ(pk) < 150°C. T , COLLECT 0.1 RATED VCEO J(pk) may be calculated from the data in Figure 5. I C TIP120, TIP125 0.05 At high case temperatures, thermal limitations will reduce TIP121, TIP126 the power that can be handled to values less than the TIP122, TIP127 0.02 limitations imposed by second breakdown 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Active−Region Safe Operating Area
10,000 300 T 5000 J = 25°C 3000 200 GAIN 2000 1000 Cob 500 T ANCE (pF) CURRENT C = 25°C 100 300 VCE = 4.0 Vdc 200 ACIT IC = 3.0 Adc 70 Cib 100 C, CAP 50 50 PNP , SMALL-SIGNAL 30 PNP NPN fe 20 h NPN 10 30 1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Small−Signal Current Gain Figure 8. Capacitance www.onsemi.com 5