link to page 2 link to page 2 link to page 2 link to page 3 link to page 3 T1610, T1635, T1650, BTA16, BTB16Characteristics1CharacteristicsTable 1. Absolute maximum ratingsSymbolParametersValueUnit TO-220AB, D2PAK Tc = 100 °C IT(RMS) RMS on-state current (full sine wave) 16 A TO-220AB Ins. Tc = 86 °C Non repetitive surge peak on-state current (full cycle, F = 50 Hz tp = 20 ms 160 ITSM T A j initial = 25 °C) F = 60 Hz tp = 16.7 ms 168 I2t I2t value for fusing tp = 10 ms 144 A2s Critical rate of rise of on-state current dl/dt F = 120 Hz Tj = 125 °C 50 A/µs IG = 2 x IGT , tr ≤ 100 ns V V DRM/VRRM + DSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25 °C V 100 IGM Peak gate current tp = 20 µs Tj = 125 °C 4 A PG(AV) Average gate power dissipation Tj = 125 °C 1 W Tstg Storage junction temperature range -40 to +150 °C Tj Operating junction temperature range -40 to +125 °C Table 2. Static electrical characteristicsSymbolTest conditionsTjValueUnit V (1) T ITM = 22.5 A, tp = 380 µs 25 °C Max. 1.55 V V (1) TO threshold on-state voltage 125 °C Max. 0.85 V R (1) D Dynamic resistance 125 °C Max. 25 mΩ 25 °C 5 µA IDRM/IRRM VDRM = VRRM Max. 125 °C 2 mA 1. For both polarities of A2 referenced to A1 Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - standard (4 quadrants)BTA16SymbolParametersQuadrantBTB16UnitCB I - II - III 25 50 I (1) GT Max. mA VD = 12 V, RL = 33 Ω IV 50 100 VGT All Max. 1.3 V VGD VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C All Min. 0.2 V I (2) H IT = 500 mA Max. 25 50 mA I - III - IV Max. 40 60 IL IG = 1.2 IGT mA II Max. 80 120 DS2114 - Rev 11page 2/18 Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 TO-220AB Insulated and non Insulated package information 2.1.1 TO-220AB Insulated and non Insulated package information 2.2 D²PAK package information 2.2.1 D²PAK package information 3 Ordering information 3.1 Product selector 3.2 Ordering information Revision history