Datasheet BUK455-60A, BUK455-60B (Philips) - 2
| 制造商 | Philips |
| 描述 | PowerMOS Transistor |
| 页数 / 页 | 7 / 2 — STATIC CHARACTERISTICS. SYMBOL. PARAMETER. CONDITIONS. MIN. TYP. MAX. … |
| 文件格式/大小 | PDF / 59 Kb |
| 文件语言 | 英语 |
STATIC CHARACTERISTICS. SYMBOL. PARAMETER. CONDITIONS. MIN. TYP. MAX. UNIT. BUK455-60A. BUK455-60B. DYNAMIC CHARACTERISTICS
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文件文字版本
Philips Semiconductors Product Specification PowerMOS transistor BUK455-60A/B
STATIC CHARACTERISTICS
T = 25 ˚C unless otherwise specified mb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V Drain-source breakdown V = 0 V; I = 0.25 mA 60 - - V (BR)DSS GS D voltage V Gate threshold voltage V = V ; I = 1 mA 2.1 3.0 4.0 V GS(TO) DS GS D I Zero gate voltage drain current V = 60 V; V = 0 V; T = 25 ˚C - 1 10 µA DSS DS GS j I Zero gate voltage drain current V = 60 V; V = 0 V; T =125 ˚C - 0.1 1.0 mA DSS DS GS j I Gate source leakage current V = ±30 V; V = 0 V - 10 100 nA GSS GS DS R Drain-source on-state V = 10 V;
BUK455-60A
- 0.03 0.038 Ω DS(ON) GS resistance I = 20 A
BUK455-60B
- 0.04 0.045 Ω D
DYNAMIC CHARACTERISTICS
T = 25 ˚C unless otherwise specified mb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g Forward transconductance V = 25 V; I = 20 A 8 13.5 - S fs DS D C Input capacitance V = 0 V; V = 25 V; f = 1 MHz - 1650 2000 pF iss GS DS C Output capacitance - 560 750 pF oss C Feedback capacitance - 300 400 pF rss t Turn-on delay time V = 30 V; I = 3 A; - 25 40 ns d on DD D t Turn-on rise time V = 10 V; R = 50 Ω; - 60 90 ns r GS GS t Turn-off delay time R = 50 Ω - 125 160 ns d off gen t Turn-off fall time - 100 130 ns f L Internal drain inductance Measured from contact screw on - 3.5 - nH d tab to centre of die L Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH d from package to centre of die L Internal source inductance Measured from source lead 6 mm - 7.5 - nH s from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T = 25 ˚C unless otherwise specified mb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I Continuous reverse drain - - - 41 A DR current I Pulsed reverse drain current - - - 164 A DRM V Diode forward voltage I = 41 A ; V = 0 V - 1.4 2.0 V SD F GS t Reverse recovery time I = 41 A; -dI /dt = 100 A/µs; - 60 - ns rr F F Q Reverse recovery charge V = 0 V; V = 30 V - 0.30 - µC rr GS R
AVALANCHE LIMITING VALUE
T = 25 ˚C unless otherwise specified mb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W Drain-source non-repetitive I = 41 A ; V ≤ 25 V ; - - 100 mJ DSS D DD unclamped inductive turn-off V = 10 V ; R = 50 Ω GS GS energy April 1993 2 Rev 1.100 Document Outline GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL LIMITING VALUES THERMAL RESISTANCES STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS AVALANCHE LIMITING VALUE MECHANICAL DATA DEFINITIONS LIFE SUPPORT APPLICATIONS
STATIC CHARACTERISTICS
T = 25 ˚C unless otherwise specified mb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V Drain-source breakdown V = 0 V; I = 0.25 mA 60 - - V (BR)DSS GS D voltage V Gate threshold voltage V = V ; I = 1 mA 2.1 3.0 4.0 V GS(TO) DS GS D I Zero gate voltage drain current V = 60 V; V = 0 V; T = 25 ˚C - 1 10 µA DSS DS GS j I Zero gate voltage drain current V = 60 V; V = 0 V; T =125 ˚C - 0.1 1.0 mA DSS DS GS j I Gate source leakage current V = ±30 V; V = 0 V - 10 100 nA GSS GS DS R Drain-source on-state V = 10 V;
BUK455-60A
- 0.03 0.038 Ω DS(ON) GS resistance I = 20 A
BUK455-60B
- 0.04 0.045 Ω D
DYNAMIC CHARACTERISTICS
T = 25 ˚C unless otherwise specified mb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g Forward transconductance V = 25 V; I = 20 A 8 13.5 - S fs DS D C Input capacitance V = 0 V; V = 25 V; f = 1 MHz - 1650 2000 pF iss GS DS C Output capacitance - 560 750 pF oss C Feedback capacitance - 300 400 pF rss t Turn-on delay time V = 30 V; I = 3 A; - 25 40 ns d on DD D t Turn-on rise time V = 10 V; R = 50 Ω; - 60 90 ns r GS GS t Turn-off delay time R = 50 Ω - 125 160 ns d off gen t Turn-off fall time - 100 130 ns f L Internal drain inductance Measured from contact screw on - 3.5 - nH d tab to centre of die L Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH d from package to centre of die L Internal source inductance Measured from source lead 6 mm - 7.5 - nH s from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T = 25 ˚C unless otherwise specified mb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I Continuous reverse drain - - - 41 A DR current I Pulsed reverse drain current - - - 164 A DRM V Diode forward voltage I = 41 A ; V = 0 V - 1.4 2.0 V SD F GS t Reverse recovery time I = 41 A; -dI /dt = 100 A/µs; - 60 - ns rr F F Q Reverse recovery charge V = 0 V; V = 30 V - 0.30 - µC rr GS R
AVALANCHE LIMITING VALUE
T = 25 ˚C unless otherwise specified mb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W Drain-source non-repetitive I = 41 A ; V ≤ 25 V ; - - 100 mJ DSS D DD unclamped inductive turn-off V = 10 V ; R = 50 Ω GS GS energy April 1993 2 Rev 1.100 Document Outline GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL LIMITING VALUES THERMAL RESISTANCES STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS AVALANCHE LIMITING VALUE MECHANICAL DATA DEFINITIONS LIFE SUPPORT APPLICATIONS