Datasheet IRF9130 (Intersil) - 3
| 制造商 | Intersil |
| 描述 | -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET |
| 页数 / 页 | 7 / 3 — IRF9130. Source to Drain Diode Specifications. PARAMETER. SYMBOL. TEST … |
| 文件格式/大小 | PDF / 67 Kb |
| 文件语言 | 英语 |
IRF9130. Source to Drain Diode Specifications. PARAMETER. SYMBOL. TEST CONDITIONS. MIN. TYP. MAX. UNITS. Typical Performance Curves. 1.2
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IRF9130 Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current ISD Modified MOSFET Symbol - - -12 A Showing the Integral Re-
D
Pulse Source to Drain Current ISDM - - -48 A verse P-N Junction Diode (Note 3)
G S
Source to Drain Diode Voltage (Note 2) VSD TC = 25oC, ISD = -12A, VGS = 0V (Figure 13) - - -1.5 V Reverse Recovery Time trr TJ =150oC, ISD = -12A, dISD/dt = 100A/µs - 300 - ns Reverse Recovery Charge QRR TJ = 150oC, ISD = -12A, dISD/dt = 100A/µs - 1.8 - µC NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, starting TJ = 25oC, L = 5.2mH, RG = 25Ω, peak IAS = 12A. See Figures 15, 16.
Typical Performance Curves
Unless Otherwise Specified
1.2 -12.0 1.0 -9.6 TIPLIER 0.8 -7.2 TION MUL 0.6 A -4.8 0.4 , DRAIN CURRENT (A) I D -2.4 WER DISSIP 0.2 PO 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TA, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE CASE TEMPERATURE 1 C/W) 0.5 o 0.2 ANCE ( P 0.1 DM 0.1 0.05 0.02 0.01 t1 , NORMALIZED TRANSIENT t2
θ
JC SINGLE PULSE NOTES: Z THERMAL IMPED DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z
θ
JC x R
θ
JC + TC 0.01 10-5 10-4 10-3 10-2 10-1 1 10 t1, RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
5-10
Continuous Source to Drain Current ISD Modified MOSFET Symbol - - -12 A Showing the Integral Re-
D
Pulse Source to Drain Current ISDM - - -48 A verse P-N Junction Diode (Note 3)
G S
Source to Drain Diode Voltage (Note 2) VSD TC = 25oC, ISD = -12A, VGS = 0V (Figure 13) - - -1.5 V Reverse Recovery Time trr TJ =150oC, ISD = -12A, dISD/dt = 100A/µs - 300 - ns Reverse Recovery Charge QRR TJ = 150oC, ISD = -12A, dISD/dt = 100A/µs - 1.8 - µC NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, starting TJ = 25oC, L = 5.2mH, RG = 25Ω, peak IAS = 12A. See Figures 15, 16.
Typical Performance Curves
Unless Otherwise Specified
1.2 -12.0 1.0 -9.6 TIPLIER 0.8 -7.2 TION MUL 0.6 A -4.8 0.4 , DRAIN CURRENT (A) I D -2.4 WER DISSIP 0.2 PO 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TA, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE CASE TEMPERATURE 1 C/W) 0.5 o 0.2 ANCE ( P 0.1 DM 0.1 0.05 0.02 0.01 t1 , NORMALIZED TRANSIENT t2
θ
JC SINGLE PULSE NOTES: Z THERMAL IMPED DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z
θ
JC x R
θ
JC + TC 0.01 10-5 10-4 10-3 10-2 10-1 1 10 t1, RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
5-10