Datasheet MTP36N06V (ON Semiconductor) - 4
| 制造商 | ON Semiconductor |
| 描述 | Power MOSFET 32 Amps, 60 Volts N−Channel TO−220 |
| 页数 / 页 | 8 / 4 — MTP36N06V. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On−Region … |
| 文件格式/大小 | PDF / 264 Kb |
| 文件语言 | 英语 |
MTP36N06V. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On−Region Characteristics. Figure 2. Transfer Characteristics
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MTP36N06V TYPICAL ELECTRICAL CHARACTERISTICS
72 72 TJ = 25°C VGS = 10 V VDS ≥ 10 V TJ = 100°C 9 V 7 V 54 54 25°C (AMPS) 8 V (AMPS) 6 V 36 36 , DRAIN CURRENT 5 V , DRAIN CURRENT 18 18 I D I D −55°C 4 V 0 0 0 1 2 3 4 1 2 3 4 5 6 7 8 9 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.1 0.052 VGS = 10 V TJ = 25°C ANCE (OHMS) 0.08 ANCE (OHMS) TJ = 100°C 0.044 0.06 VGS = 10 V 0.04 25°C O−SOURCE RESIST O−SOURCE RESIST 0.036 15 V −55°C 0.02 , DRAIN−T , DRAIN−T DS(on) 0 DS(on) R R 0.028 0 18 36 54 72 0 18 36 54 72 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Temperature and Gate Voltage
1.8 1000 V V GS = 0 V GS = 10 V ANCE 1.6 ID = 16 A TJ = 125°C 1.4 100 100°C 1.2 O−SOURCE RESIST , LEAKAGE (nA) (NORMALIZED) 1 10 25°C I DSS , DRAIN−T 0.8 DS(on)R 1 0.6 −50 −25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 T V J, JUNCTION TEMPERATURE (°C) DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage Temperature Current versus Voltage http://onsemi.com 3
72 72 TJ = 25°C VGS = 10 V VDS ≥ 10 V TJ = 100°C 9 V 7 V 54 54 25°C (AMPS) 8 V (AMPS) 6 V 36 36 , DRAIN CURRENT 5 V , DRAIN CURRENT 18 18 I D I D −55°C 4 V 0 0 0 1 2 3 4 1 2 3 4 5 6 7 8 9 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.1 0.052 VGS = 10 V TJ = 25°C ANCE (OHMS) 0.08 ANCE (OHMS) TJ = 100°C 0.044 0.06 VGS = 10 V 0.04 25°C O−SOURCE RESIST O−SOURCE RESIST 0.036 15 V −55°C 0.02 , DRAIN−T , DRAIN−T DS(on) 0 DS(on) R R 0.028 0 18 36 54 72 0 18 36 54 72 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Temperature and Gate Voltage
1.8 1000 V V GS = 0 V GS = 10 V ANCE 1.6 ID = 16 A TJ = 125°C 1.4 100 100°C 1.2 O−SOURCE RESIST , LEAKAGE (nA) (NORMALIZED) 1 10 25°C I DSS , DRAIN−T 0.8 DS(on)R 1 0.6 −50 −25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 T V J, JUNCTION TEMPERATURE (°C) DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage Temperature Current versus Voltage http://onsemi.com 3