Datasheet KSD1616-Y/G/L, KSD1616A-Y/G (MCC) - 2
| 制造商 | MCC |
| 描述 | NPN Silicon Epitaxial Transistors |
| 页数 / 页 | 4 / 2 — KSD1616-Y/G/L&KSD1616A-Y/G. Electrical Characteristics @ TA=25°C … |
| 文件格式/大小 | PDF / 450 Kb |
| 文件语言 | 英语 |
KSD1616-Y/G/L&KSD1616A-Y/G. Electrical Characteristics @ TA=25°C Unless Otherwise Specified. Parameter. Symbol. Min. Typ. Max
该数据表的模型线
文件文字版本
KSD1616-Y/G/L&KSD1616A-Y/G Electrical Characteristics @ TA=25°C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions
Collector Cut-off Current ICBO 100 nA VCB=60V, IE=0 Emitter Cutoff Current IEBO 100 nA VEB=6V, IC=0 DC Current Gain KSD1616 135 600 hFE(1) VCE=2V, IC=100mA KSD1616A 135 400 DC Current Gain hFE(2) 81 VCE=2V, IC=1A Collector-Emitter Saturation Voltage V I CE(sat) 0.15 0.3 V C=1A, IB=50mA Base-Emitter Saturation Voltage VBE(sat) 0.9 1.2 V IC=1.5A, IB=75mA Base-Emitter On Voltage VBE(on) 0.6 0.64 0.7 V VCE=2V, IC=50mA Transition Frequency fT 100 160 MHz VCE=2V, IC=100mA Turn On Time tON 70 ns VCC=10V, VBE(OFF)=-2~-3V, IC=100mA, Storage Time tSTG 950 ns IB1=IB2=10mA Fall Time tF 70 ns Output Capacitance C 19 pF V ob CE=10V, IE=0, f=1MHz
Classification of hFE(1)
Rank Y G L Range 135-270 200-400 300-600 Rev.3-2-12012020 2/4 MCCSEMI.COM Document Outline 空白页面
Collector Cut-off Current ICBO 100 nA VCB=60V, IE=0 Emitter Cutoff Current IEBO 100 nA VEB=6V, IC=0 DC Current Gain KSD1616 135 600 hFE(1) VCE=2V, IC=100mA KSD1616A 135 400 DC Current Gain hFE(2) 81 VCE=2V, IC=1A Collector-Emitter Saturation Voltage V I CE(sat) 0.15 0.3 V C=1A, IB=50mA Base-Emitter Saturation Voltage VBE(sat) 0.9 1.2 V IC=1.5A, IB=75mA Base-Emitter On Voltage VBE(on) 0.6 0.64 0.7 V VCE=2V, IC=50mA Transition Frequency fT 100 160 MHz VCE=2V, IC=100mA Turn On Time tON 70 ns VCC=10V, VBE(OFF)=-2~-3V, IC=100mA, Storage Time tSTG 950 ns IB1=IB2=10mA Fall Time tF 70 ns Output Capacitance C 19 pF V ob CE=10V, IE=0, f=1MHz
Classification of hFE(1)
Rank Y G L Range 135-270 200-400 300-600 Rev.3-2-12012020 2/4 MCCSEMI.COM Document Outline 空白页面