Datasheet IRL540 (Vishay) - 2
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 9 / 2 — IRL540. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. … |
| 文件格式/大小 | PDF / 259 Kb |
| 文件语言 | 英语 |
IRL540. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. Static. Dynamic
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文件文字版本
IRL540
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - °C/W Maximum junction-to-case (drain) RthJC - 1.0
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 1.0 - 2.0 V Gate-source leakage IGSS VGS = ± 10 V - - ± 100 nA VDS = 100 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 VGS = 5.0 V ID = 17 Ab - - 0.077 Drain-source on-state resistance RDS(on) Ω VGS = 4.0 V ID = 14 Ab - - 0.11 Forward transconductance gfs VDS = 50 V, ID = 17 A 12 - - S
Dynamic
Input capacitance Ciss - 2200 - VGS = 0 V, Output capacitance Coss VDS = 25 V, - 560 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 140 - Total gate charge Qg - - 64 I Gate-source charge Qgs V D = 28 A, VDS = 80 V, GS = 5.0 V - - 9.4 nC see fig. 6 and 13b Gate-drain charge Qgd - - 27 Turn-on delay time td(on) - 8.5 - Rise time tr V - 170 - DD = 50 V, ID = 28 A, ns Rg = 9.0 Turn-off delay time t Ω, RD = 1.7 Ω, see fig. 10b d(off) - 35 - Fall time tf - 80 - Between lead, D Internal drain inductance LD - 4.5 - 6 mm (0.25") from package and center of nH G Internal source inductance L die contact S - 7.5 - S
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I MOSFET symbol D S - - 28 showing the A integral reverse G Pulsed diode forward current a ISM p - n junction diode S - - 110 Body diode voltage VSD TJ = 25 °C, IS = 28 A, VGS = 0 Vb - - 2.5 V Body diode reverse recovery time trr - 200 260 ns TJ = 25 °C, IF = 28 A, dI/dt = 100 A/μsb Body diode reverse recovery charge Qrr - 1.7 2.90 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-1046-Rev. C, 25-Oct-2021
2
Document Number: 91300 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - °C/W Maximum junction-to-case (drain) RthJC - 1.0
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 1.0 - 2.0 V Gate-source leakage IGSS VGS = ± 10 V - - ± 100 nA VDS = 100 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 VGS = 5.0 V ID = 17 Ab - - 0.077 Drain-source on-state resistance RDS(on) Ω VGS = 4.0 V ID = 14 Ab - - 0.11 Forward transconductance gfs VDS = 50 V, ID = 17 A 12 - - S
Dynamic
Input capacitance Ciss - 2200 - VGS = 0 V, Output capacitance Coss VDS = 25 V, - 560 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 140 - Total gate charge Qg - - 64 I Gate-source charge Qgs V D = 28 A, VDS = 80 V, GS = 5.0 V - - 9.4 nC see fig. 6 and 13b Gate-drain charge Qgd - - 27 Turn-on delay time td(on) - 8.5 - Rise time tr V - 170 - DD = 50 V, ID = 28 A, ns Rg = 9.0 Turn-off delay time t Ω, RD = 1.7 Ω, see fig. 10b d(off) - 35 - Fall time tf - 80 - Between lead, D Internal drain inductance LD - 4.5 - 6 mm (0.25") from package and center of nH G Internal source inductance L die contact S - 7.5 - S
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I MOSFET symbol D S - - 28 showing the A integral reverse G Pulsed diode forward current a ISM p - n junction diode S - - 110 Body diode voltage VSD TJ = 25 °C, IS = 28 A, VGS = 0 Vb - - 2.5 V Body diode reverse recovery time trr - 200 260 ns TJ = 25 °C, IF = 28 A, dI/dt = 100 A/μsb Body diode reverse recovery charge Qrr - 1.7 2.90 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-1046-Rev. C, 25-Oct-2021
2
Document Number: 91300 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000