Datasheet BSP752T (Infineon)
| 制造商 | Infineon |
| 描述 | Smart High-Side Power Switch |
| 页数 / 页 | 17 / 1 — Smart High-Side Power Switch. BSP752T. 6PDUW3RZHU+LJK6LGH6ZLWFK. … |
| 修订版 | 01_01 |
| 文件格式/大小 | PDF / 237 Kb |
| 文件语言 | 英语 |
Smart High-Side Power Switch. BSP752T. 6PDUW3RZHU+LJK6LGH6ZLWFK. )HDWXUHV. 3URGXFW6XPPDU\. Application. General Description
该数据表的模型线
文件文字版本
Smart High-Side Power Switch BSP752T 6PDUW3RZHU+LJK6LGH6ZLWFK )HDWXUHV 3URGXFW6XPPDU\
•2YHUORDGSURWHFWLRQ 2YHUYROWDJHSURWHFWLRQ 9EE$= 9 • &XUUHQWOLPLWDWLRQ 2SHUDWLQJYROWDJH 9EERQ 9 •6KRUWFLUFXLWSURWHFWLRQ 2QVWDWHUHVLVWDQFH 521 PΩ •7KHUPDOVKXWGRZQZLWKUHVWDUW 1RPLQDOORDGFXUUHQW ,/QRP $ •2YHUYROWDJHSURWHFWLRQLQFOXGLQJORDGGXPS •)DVWGHPDJQHWL]DWLRQRILQGXFWLYHORDGV • 5HYHUVHEDWWHU\SURWHFWLRQZLWKH[WHUQDOUHVLVWRU •&026FRPSDWLEOHLQSXW •/RVVRI*1'DQGORVVRI9EESURWHFWLRQ •(6'3URWHFWLRQ •9HU\ORZVWDQGE\FXUUHQW • AEC qualified • Green product (RoHS compliant) PG-DSO8
Application
• All types of resistive, inductive and capacitive loads • µC compatible power switch for 12 V, 24 V and 42 V DC applications • Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Data Sheet 1 V1.1, 2007-05-29
•2YHUORDGSURWHFWLRQ 2YHUYROWDJHSURWHFWLRQ 9EE$= 9 • &XUUHQWOLPLWDWLRQ 2SHUDWLQJYROWDJH 9EERQ 9 •6KRUWFLUFXLWSURWHFWLRQ 2QVWDWHUHVLVWDQFH 521 PΩ •7KHUPDOVKXWGRZQZLWKUHVWDUW 1RPLQDOORDGFXUUHQW ,/QRP $ •2YHUYROWDJHSURWHFWLRQLQFOXGLQJORDGGXPS •)DVWGHPDJQHWL]DWLRQRILQGXFWLYHORDGV • 5HYHUVHEDWWHU\SURWHFWLRQZLWKH[WHUQDOUHVLVWRU •&026FRPSDWLEOHLQSXW •/RVVRI*1'DQGORVVRI9EESURWHFWLRQ •(6'3URWHFWLRQ •9HU\ORZVWDQGE\FXUUHQW • AEC qualified • Green product (RoHS compliant) PG-DSO8
Application
• All types of resistive, inductive and capacitive loads • µC compatible power switch for 12 V, 24 V and 42 V DC applications • Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Data Sheet 1 V1.1, 2007-05-29