Datasheet MPSH81, MMBTH81 (ON Semiconductor) - 2

MPSH81 / MMBTH81 MPSH81 MMBTH81
C E
C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor
This device is designed for general RF amplifier and mixer
applications to 250 mHz with collector currents in the 1.0 mA
to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*
Symbol TA = 25°C unless otherwise noted Parameter Value Units 20 V VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage 20 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current -Continuous 50 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics
Symbol
PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation Max Units MPSH81
350
2.8
125 *MMBTH81
225
1.8 357 556 mW
mW/°C
°C/W
°C/W