Datasheet IRF540 (Vishay) - 2
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 8 / 2 — IRF540. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. … |
| 文件格式/大小 | PDF / 155 Kb |
| 文件语言 | 英语 |
IRF540. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. Static. Dynamic
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文件文字版本
IRF540
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - °C/W Maximum junction-to-case (drain) RthJC - 1.0
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 100 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-source on-state resistance RDS(on) VGS = 10 V ID = 17 A b - - 0.077 Ω Forward transconductance gfs VDS = 50 V, ID = 17 A b 8.7 - - S
Dynamic
Input capacitance Ciss V - 1700 - GS = 0 V, Output capacitance Coss VDS = 25 V, - 560 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 120 - Total gate charge Qg - - 72 I Gate-source charge Qgs V D = 17 A, VDS = 80 V, GS = 10 V - - 11 nC see fig. 6 and 13 b Gate-drain charge Qgd - - 32 Turn-on delay time td(on) - 11 - Rise time tr V - 44 - DD = 50 V, ID = 17 A ns R Turn-off delay time t g = 9.1 Ω, RD = 2.9 Ω, see fig. 10 b d(off) - 53 - Fall time tf - 43 - Gate input resistance Rg f = 1 MHz, open drain 0.5 - 3.6 Ω Between lead, D Internal drain inductance LD - 4.5 - 6 mm (0.25") from package and center of nH G die contact Internal source inductance LS - 7.5 - S
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous source-drain diode current I D S - - 28 showing the integral reverse A G Pulsed diode forward current a I p - n junction diode SM - - 110 S Body diode voltage VSD TJ = 25 °C, IS = 28 A, VGS = 0 V b - - 2.5 V Body diode reverse recovery time trr - 180 360 ns TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs b Body diode reverse recovery charge Qrr - 1.3 2.8 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0819-Rev. C, 02-Aug-2021
2
Document Number: 91021 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - °C/W Maximum junction-to-case (drain) RthJC - 1.0
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 100 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-source on-state resistance RDS(on) VGS = 10 V ID = 17 A b - - 0.077 Ω Forward transconductance gfs VDS = 50 V, ID = 17 A b 8.7 - - S
Dynamic
Input capacitance Ciss V - 1700 - GS = 0 V, Output capacitance Coss VDS = 25 V, - 560 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 120 - Total gate charge Qg - - 72 I Gate-source charge Qgs V D = 17 A, VDS = 80 V, GS = 10 V - - 11 nC see fig. 6 and 13 b Gate-drain charge Qgd - - 32 Turn-on delay time td(on) - 11 - Rise time tr V - 44 - DD = 50 V, ID = 17 A ns R Turn-off delay time t g = 9.1 Ω, RD = 2.9 Ω, see fig. 10 b d(off) - 53 - Fall time tf - 43 - Gate input resistance Rg f = 1 MHz, open drain 0.5 - 3.6 Ω Between lead, D Internal drain inductance LD - 4.5 - 6 mm (0.25") from package and center of nH G die contact Internal source inductance LS - 7.5 - S
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous source-drain diode current I D S - - 28 showing the integral reverse A G Pulsed diode forward current a I p - n junction diode SM - - 110 S Body diode voltage VSD TJ = 25 °C, IS = 28 A, VGS = 0 V b - - 2.5 V Body diode reverse recovery time trr - 180 360 ns TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs b Body diode reverse recovery charge Qrr - 1.3 2.8 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0819-Rev. C, 02-Aug-2021
2
Document Number: 91021 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000