Datasheet IRF540 (Vishay) - 3
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 8 / 3 — IRF540. TYPICAL CHARACTERISTICS. Fig. 1 - Typical Output Characteristics, … |
| 文件格式/大小 | PDF / 155 Kb |
| 文件语言 | 英语 |
IRF540. TYPICAL CHARACTERISTICS. Fig. 1 - Typical Output Characteristics, TC = 25 °C
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IRF540
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 3.0 VGS I = 17 A D 102 Top 15 V V = 10 V GS 10 V 2.5 8.0 V 7.0 V 6.0 V 2.0 5.5 V 5.0 V ed) Bottom 4.5 V 1.5 101 maliz ain Current (A) 4.5 V (Nor , Dr 1.0 I D ain-to-Source On Resistance , Dr 0.5 20 µs Pulse Width T = 25 °C C DS(on) 0.0 R 10-1 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180 91021_01 VDS, Drain-to-Source Voltage (V) 91021_04 TJ, Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature
V 3000 GS 102 VGS = 0 V, f = 1 MHz Top 15 V C = C + C , C Shorted iss gs gd ds 10 V 2400 C = C rss gd 8.0 V C = C + C oss ds gd 7.0 V 6.0 V C 5.5 V 1800 iss 5.0 V 4.5 V 101 Bottom 4.5 V ain Current (A) 1200 , Dr C Capacitance (pF) oss I D 600 20 µs Pulse Width Crss T = 175 °C C 0 10-1 100 101 100 101 91021_02 VDS, Drain-to-Source Voltage (V) 91021_05 VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
102 20 I = 17 A D 25 °C V = 80 V DS 16 V = 50 V ltage (V) DS 175 °C o V V = 20 V 12 DS ain Current (A) 101 8 , Dr I D , Gate-to-Source 4 20 µs Pulse Width GSV For test circuit V = 50 V DS see figure 13 0 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 91021_03 VGS, Gate-to-Source Voltage (V) 91021_06 QG, Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S21-0819-Rev. C, 02-Aug-2021
3
Document Number: 91021 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 3.0 VGS I = 17 A D 102 Top 15 V V = 10 V GS 10 V 2.5 8.0 V 7.0 V 6.0 V 2.0 5.5 V 5.0 V ed) Bottom 4.5 V 1.5 101 maliz ain Current (A) 4.5 V (Nor , Dr 1.0 I D ain-to-Source On Resistance , Dr 0.5 20 µs Pulse Width T = 25 °C C DS(on) 0.0 R 10-1 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180 91021_01 VDS, Drain-to-Source Voltage (V) 91021_04 TJ, Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature
V 3000 GS 102 VGS = 0 V, f = 1 MHz Top 15 V C = C + C , C Shorted iss gs gd ds 10 V 2400 C = C rss gd 8.0 V C = C + C oss ds gd 7.0 V 6.0 V C 5.5 V 1800 iss 5.0 V 4.5 V 101 Bottom 4.5 V ain Current (A) 1200 , Dr C Capacitance (pF) oss I D 600 20 µs Pulse Width Crss T = 175 °C C 0 10-1 100 101 100 101 91021_02 VDS, Drain-to-Source Voltage (V) 91021_05 VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
102 20 I = 17 A D 25 °C V = 80 V DS 16 V = 50 V ltage (V) DS 175 °C o V V = 20 V 12 DS ain Current (A) 101 8 , Dr I D , Gate-to-Source 4 20 µs Pulse Width GSV For test circuit V = 50 V DS see figure 13 0 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 91021_03 VGS, Gate-to-Source Voltage (V) 91021_06 QG, Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S21-0819-Rev. C, 02-Aug-2021
3
Document Number: 91021 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000