Datasheet BF909, BF909R (NXP) - 4
| 制造商 | NXP |
| 描述 | N-channel dual gate MOS-FETs |
| 页数 / 页 | 12 / 4 — THERMAL CHARACTERISTICS. SYMBOL. PARAMETER. CONDITIONS. VALUE. UNIT. … |
| 文件格式/大小 | PDF / 328 Kb |
| 文件语言 | 英语 |
THERMAL CHARACTERISTICS. SYMBOL. PARAMETER. CONDITIONS. VALUE. UNIT. Notes. STATIC CHARACTERISTICS. MIN. MAX. Note. DYNAMIC CHARACTERISTICS
该数据表的模型线
文件文字版本
NXP Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 BF909 500 K/W BF909R 550 K/W Rth j-s thermal resistance from junction to soldering point note 2 BF909 Ts = 92 °C 290 K/W BF909R Ts = 78 °C 360 K/W
Notes
1. Device mounted on a printed-circuit board. 2. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V(BR)G1-SS gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-S = 10 mA 6 15 V V(BR)G2-SS gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-S = 10 mA 6 15 V V(F)S-G1 forward source-gate 1 voltage VG2-S = VDS = 0; IS-G1 = 10 mA 0.5 1.5 V V(F)S-G2 forward source-gate 2 voltage VG1-S = VDS = 0; IS-G2 = 10 mA 0.5 1.5 V VG1-S(th) gate 1-source threshold voltage VG2-S = 4 V; VDS = 5 V; 0.3 1 V ID = 20 µA VG2-S(th) gate 2-source threshold voltage VG1-S = VDS = 5 V; ID = 20 µA 0.3 1.2 V IDSX drain-source current VG2-S = 4 V; VDS = 5 V; 12 20 mA RG1 = 120 kΩ; note 1 IG1-SS gate 1 cut-off current VG1-S = 5 V; VG2-S = VDS = 0 − 50 nA IG2-SS gate 2 cut-off current VG2-S = 5 V; VG1-S = VDS = 0 − 50 nA
Note
1. RG1 connects gate 1 to VGG = 5 V; see Fig.18.
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
yfs forward transfer admittance pulsed; Tj = 25 °C 36 43 50 mS Cig1-s input capacitance at gate 1 f = 1 MHz − 3.6 4.3 pF Cig2-s input capacitance at gate 2 f = 1 MHz − 2.3 3 pF Cos drain-source capacitance f = 1 MHz − 2.3 3 pF Crs reverse transfer capacitance f = 1 MHz − 35 50 fF F noise figure f = 800 MHz; GS = GSopt; BS = BSopt − 2 2.8 dB Rev. 02 - 19 November 2007 4 of 12 Document Outline FEATURES APPLICATIONS DESCRIPTION PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS PACKAGE OUTLINES Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Revision history
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 BF909 500 K/W BF909R 550 K/W Rth j-s thermal resistance from junction to soldering point note 2 BF909 Ts = 92 °C 290 K/W BF909R Ts = 78 °C 360 K/W
Notes
1. Device mounted on a printed-circuit board. 2. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V(BR)G1-SS gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-S = 10 mA 6 15 V V(BR)G2-SS gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-S = 10 mA 6 15 V V(F)S-G1 forward source-gate 1 voltage VG2-S = VDS = 0; IS-G1 = 10 mA 0.5 1.5 V V(F)S-G2 forward source-gate 2 voltage VG1-S = VDS = 0; IS-G2 = 10 mA 0.5 1.5 V VG1-S(th) gate 1-source threshold voltage VG2-S = 4 V; VDS = 5 V; 0.3 1 V ID = 20 µA VG2-S(th) gate 2-source threshold voltage VG1-S = VDS = 5 V; ID = 20 µA 0.3 1.2 V IDSX drain-source current VG2-S = 4 V; VDS = 5 V; 12 20 mA RG1 = 120 kΩ; note 1 IG1-SS gate 1 cut-off current VG1-S = 5 V; VG2-S = VDS = 0 − 50 nA IG2-SS gate 2 cut-off current VG2-S = 5 V; VG1-S = VDS = 0 − 50 nA
Note
1. RG1 connects gate 1 to VGG = 5 V; see Fig.18.
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
yfs forward transfer admittance pulsed; Tj = 25 °C 36 43 50 mS Cig1-s input capacitance at gate 1 f = 1 MHz − 3.6 4.3 pF Cig2-s input capacitance at gate 2 f = 1 MHz − 2.3 3 pF Cos drain-source capacitance f = 1 MHz − 2.3 3 pF Crs reverse transfer capacitance f = 1 MHz − 35 50 fF F noise figure f = 800 MHz; GS = GSopt; BS = BSopt − 2 2.8 dB Rev. 02 - 19 November 2007 4 of 12 Document Outline FEATURES APPLICATIONS DESCRIPTION PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS PACKAGE OUTLINES Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Revision history