Datasheet N-Channel 60-V (D-S) MOSFET (Vishay)
| 制造商 | Vishay |
| 描述 | P-Channel 80 V (D-S) MOSFET |
| 页数 / 页 | 10 / 1 — Si2337DS. P-Channel 80 V (D-S) MOSFET. FEATURES. SOT-23 (TO-236). Marking … |
| 文件格式/大小 | PDF / 226 Kb |
| 文件语言 | 英语 |
Si2337DS. P-Channel 80 V (D-S) MOSFET. FEATURES. SOT-23 (TO-236). Marking code:. PRODUCT SUMMARY. ORDERING INFORMATION
该数据表的模型线
文件文字版本
Si2337DS
www.vishay.com Vishay Siliconix
P-Channel 80 V (D-S) MOSFET FEATURES SOT-23 (TO-236)
• TrenchFET® power MOSFET D • Material categorization: 3 for definitions of compliance please see www.vishay.com/doc?99912 2 Available S S 1 G Top View
Marking code:
E7 G
PRODUCT SUMMARY
VDS (V) -80 RDS(on) max. () at VGS = -10 V 0.270 D RDS(on) max. () at VGS = -6 V 0.303 Qg typ. (nC) 7 P-Channel MOSFET ID (A) a -2.2 Configuration Single
ORDERING INFORMATION
Package SOT-23 Lead (Pb)-free Si2337DS-T1-E3 Lead (Pb)-free and halogen-free Si2337DS-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -80 V Gate-source voltage VGS ± 20 TC = 25 °C -2.2 TC = 70 °C -1.75 Continuous drain current (TJ = 150 °C) ID TA = 25 °C -1.2 b, c TA = 70 °C -0.96 b, c A Pulsed drain current IDM -7 TC = 25 °C -2.1 Continuous source-drain diode current IS TA = 25 °C -0.63 b, c Avalanche current IAS 11 L = 0.1 mH Single-pulse avalanche energy EAS 6 mJ TC = 25 °C 2.5 TC = 70 °C 1.6 Maximum power dissipation PD W TA = 25 °C 0.76 b, c TA = 70 °C 0.48 b, c Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) d, e 260
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b, d t 10 s RthJA 120 166 °C/W Maximum junction-to-foot (drain) Steady state RthJF 40 50
Notes
a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. Maximum under steady state conditions is 166 °C/W S19-0386-Rev. F, 20-May-2019
1
Document Number: 73533 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
P-Channel 80 V (D-S) MOSFET FEATURES SOT-23 (TO-236)
• TrenchFET® power MOSFET D • Material categorization: 3 for definitions of compliance please see www.vishay.com/doc?99912 2 Available S S 1 G Top View
Marking code:
E7 G
PRODUCT SUMMARY
VDS (V) -80 RDS(on) max. () at VGS = -10 V 0.270 D RDS(on) max. () at VGS = -6 V 0.303 Qg typ. (nC) 7 P-Channel MOSFET ID (A) a -2.2 Configuration Single
ORDERING INFORMATION
Package SOT-23 Lead (Pb)-free Si2337DS-T1-E3 Lead (Pb)-free and halogen-free Si2337DS-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -80 V Gate-source voltage VGS ± 20 TC = 25 °C -2.2 TC = 70 °C -1.75 Continuous drain current (TJ = 150 °C) ID TA = 25 °C -1.2 b, c TA = 70 °C -0.96 b, c A Pulsed drain current IDM -7 TC = 25 °C -2.1 Continuous source-drain diode current IS TA = 25 °C -0.63 b, c Avalanche current IAS 11 L = 0.1 mH Single-pulse avalanche energy EAS 6 mJ TC = 25 °C 2.5 TC = 70 °C 1.6 Maximum power dissipation PD W TA = 25 °C 0.76 b, c TA = 70 °C 0.48 b, c Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) d, e 260
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b, d t 10 s RthJA 120 166 °C/W Maximum junction-to-foot (drain) Steady state RthJF 40 50
Notes
a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. Maximum under steady state conditions is 166 °C/W S19-0386-Rev. F, 20-May-2019
1
Document Number: 73533 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000