Datasheet 2N7075 (Temic) - 2

TEMIC
2N7075 Siliconix Specifications (TJ -25°C Unless Otherwise Noted)
Limit
Parameter Symbol Test Condition Min V(BR)DSS = OY, ID = 250 JlA
= 250 ~A
VDS = OY,Vas = ±20V
Vns = 80 Y, Vas -OV
Vns = 80 Y, Vas = 0 Y, T] = 125 C
Vns = 5Y,Vas = 10V
Vas = 10 Y, In = 24 A
Vas -10 Y, In = 24 A, T] -12S C
Vns -15 Y, In = 24 A 100 1yP" Max Unit Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage Vas(tb)
lass Zero Gate Voltage Drain Current Inss On-State Drain Currentb In(o.) Drain-Source On-State Resistanceb
Forward Transconductanceb rnS(oo) gr. Vas VDS -Vas. ID V 2.0 4.0
±100 nA 25
250
30 9 JlA
A 0.053 0.065 0.08 0.10 11 27 Q S Dynamic Output Capacitance Ctss
Co. Reverse 'fransfer Capacitance c,.,. Input Capacitance Thtal Gale Chargee Qg Gate-Source Chargee Qg. Gate-Drain Chargee Qgd Thrn-On Delay TImee
RiseTImee
Thro-Off Delay TImee
FallTImee 2800
Vas = OY, Vns = ZSY, f = 1 MHz 1100 pF 400
Vns = SOY, Vas = lOY, In = 30A 62 125 17 22 35 65 Id(oo) 15 35 tr 80 150 60 125 50 100 Id(off) Vnn = SOY, RL = 1.67 Q
In'" 30 A, Vaw = lOY, Ra = 2.4 Q tf nC ns Source-Drain Diode Ratings and Characteristics
Continuous Current Is 30 Pulsed Current ISM 120 A
Diode Forward Voltageb VSD Reverse Recovery TIme Irr Reverse Recovery Charge Q rr IF
IF = 30 A, Vas = OV = 30 A, di/dl = 100 N~ 0.6
180
0.6 1.9 V 400 ns
~C Noles:
a. For design aid only; nol subject to production testing.
b. Pulse test; pulse width S 3OO~. duty cycle s 2%.
c. Independent of operating temperature. 6-174 P-36736-Rev. C (05/30/94)