Datasheet TLX9188 (Toshiba) - 3
| 制造商 | Toshiba |
| 描述 | TOSHIBA Photocoupler IRLED & Photo-Transistor |
| 页数 / 页 | 8 / 3 — Electrical Characteristics (Unless otherwise specified, Ta = -40 to 125°C) |
| 文件格式/大小 | PDF / 613 Kb |
| 文件语言 | 英语 |
Electrical Characteristics (Unless otherwise specified, Ta = -40 to 125°C)
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TLX9188
Electrical Characteristics (Unless otherwise specified, Ta = -40 to 125°C)
Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA, Ta = 25 °C 1.0 1.27 1.55 V D E Reverse current I L R VR = 5 V ― — 10 μA Capacitance CT V = 0 V, f = 1 MHz, Ta = 25 °C — 30 — pF Collector-emitter V breakdown voltage (BR) CEO IC = 0.1 mA 200 — — V Emitter-collector V(BR) ECO IE = 0.01 mA 7 — — V r breakdown voltage to c te VCE = 200 V, Ta = 25 °C — 0.01 0.2 e D Collector dark current ICEO VCE = 200 V, Ta = 85 °C — - 5 μA VCE = 200 V, Ta = 105 °C — - 50 Capacitance C (collector to emitter) CE V = 0 V, f = 1 MHz, Ta = 25 °C — 10 — pF
Coupled Electrical Characteristics (Unless otherwise specified, Ta = -40 to 125°C)
Characteristic Symbol Test Condition Min Typ. Max Unit IF = 5 mA, VCE = 5 V 20 — 600 Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V, Ta = 25 °C 50 — 600 IF = 5 mA, VCE = 5 V , Ta = 25 °C 100 — 600 % Rank GB IF = 1 mA, VCE = 0.4 V, Ta = 25 °C — 60 — Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V, Ta = 25 °C 30 — — Rank GB IC = 2.4 mA, IF = 8 mA, Ta = 25 °C — — 0.4 Collector-emitter V — — 0.4 V saturation voltage CE (sat) IC = 0.2 mA, IF = 1 mA Ta=25 °C — 0.1 0.4 Off-state collector current IC (off) VF = 0.7V, VCE = 200 V , Ta = 25 °C — — 10 μA
Isolation Characteristics (Unless otherwise specified, Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit Capacitance (input to output) CS VS = 0 V, f = 1 MHz — 0.8 ― pF Isolation resistance RS VS = 500 V, R.H. ≤ 60% 1012 1014 — Ω Isolation voltage BVS AC, 60 s 3750 — — Vrms Note : This device is considered as a two terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together. © 2 021 3 2021-09-13 Toshiba Electronic Devices & Storage Corporation
Electrical Characteristics (Unless otherwise specified, Ta = -40 to 125°C)
Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA, Ta = 25 °C 1.0 1.27 1.55 V D E Reverse current I L R VR = 5 V ― — 10 μA Capacitance CT V = 0 V, f = 1 MHz, Ta = 25 °C — 30 — pF Collector-emitter V breakdown voltage (BR) CEO IC = 0.1 mA 200 — — V Emitter-collector V(BR) ECO IE = 0.01 mA 7 — — V r breakdown voltage to c te VCE = 200 V, Ta = 25 °C — 0.01 0.2 e D Collector dark current ICEO VCE = 200 V, Ta = 85 °C — - 5 μA VCE = 200 V, Ta = 105 °C — - 50 Capacitance C (collector to emitter) CE V = 0 V, f = 1 MHz, Ta = 25 °C — 10 — pF
Coupled Electrical Characteristics (Unless otherwise specified, Ta = -40 to 125°C)
Characteristic Symbol Test Condition Min Typ. Max Unit IF = 5 mA, VCE = 5 V 20 — 600 Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V, Ta = 25 °C 50 — 600 IF = 5 mA, VCE = 5 V , Ta = 25 °C 100 — 600 % Rank GB IF = 1 mA, VCE = 0.4 V, Ta = 25 °C — 60 — Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V, Ta = 25 °C 30 — — Rank GB IC = 2.4 mA, IF = 8 mA, Ta = 25 °C — — 0.4 Collector-emitter V — — 0.4 V saturation voltage CE (sat) IC = 0.2 mA, IF = 1 mA Ta=25 °C — 0.1 0.4 Off-state collector current IC (off) VF = 0.7V, VCE = 200 V , Ta = 25 °C — — 10 μA
Isolation Characteristics (Unless otherwise specified, Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit Capacitance (input to output) CS VS = 0 V, f = 1 MHz — 0.8 ― pF Isolation resistance RS VS = 500 V, R.H. ≤ 60% 1012 1014 — Ω Isolation voltage BVS AC, 60 s 3750 — — Vrms Note : This device is considered as a two terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together. © 2 021 3 2021-09-13 Toshiba Electronic Devices & Storage Corporation