Datasheet CBRDFSH2-40, CBRDFSH2-60, CBRDFSH2-100 (Central Semiconductor)
| 制造商 | Central Semiconductor |
| 描述 | SURFACE MOUNT 2.0 AMP SILICON SCHOTTKY BRIDGE RECTIFIERS |
| 页数 / 页 | 6 / 1 — CBRDFSH2-40. CBRDFSH2-60. CBRDFSH2-100. www.centra lsemi.com. SURFACE … |
| 文件格式/大小 | PDF / 820 Kb |
| 文件语言 | 英语 |
CBRDFSH2-40. CBRDFSH2-60. CBRDFSH2-100. www.centra lsemi.com. SURFACE MOUNT. DESCRIPTION:. 2.0 AMP SILICON
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CBRDFSH2-40 CBRDFSH2-60 CBRDFSH2-100 www.centra lsemi.com SURFACE MOUNT DESCRIPTION: 2.0 AMP SILICON
The CENTRAL SEMICONDUCTOR CBRDFSH2-40,
SCHOTTKY BRIDGE RECTIFIERS
CBRDFSH2-60, and CBRDFSH2-100 are 2.0 Amp full wave bridge rectifiers mounted in a durable epoxy surface mount case, utilizing glass passivated chips.
MARKING CODES: CBRDFSH2-40: SH2-40 CBRDFSH2-60: SH2-60 CBRDFSH2-100: SH2100 BR DFN CASE MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
CBRDFSH2 SYMBOL -40 -60 -100 UNITS
Peak Repetitive Reverse Voltage VRRM 40 60 100 V DC Blocking Voltage VR 40 60 100 V RMS Reverse Voltage VR(RMS) 28 42 70 V Average Forward Current (TA=50°C) IO 2.0 A Peak Forward Surge Current (8.3ms) IFSM 50 A Operating and Storage Junction Temperature TJ, Tstg -55 to +125 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=40V (CBRDFSH2-40) 25 200 µA IR VR=60V (CBRDFSH2-60) 10 200 µA IR VR=100V (CBRDFSH2-100) 0.5 200 µA VF IF=2.0A (CBRDFSH2-40) 490 520 mV VF IF=2.0A (CBRDFSH2-60) 600 700 mV VF IF=2.0A (CBRDFSH2-100) 800 850 mV CJ VR=4.0V, f=1.0MHz 250 pF R4 (6-December 2019)
The CENTRAL SEMICONDUCTOR CBRDFSH2-40,
SCHOTTKY BRIDGE RECTIFIERS
CBRDFSH2-60, and CBRDFSH2-100 are 2.0 Amp full wave bridge rectifiers mounted in a durable epoxy surface mount case, utilizing glass passivated chips.
MARKING CODES: CBRDFSH2-40: SH2-40 CBRDFSH2-60: SH2-60 CBRDFSH2-100: SH2100 BR DFN CASE MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
CBRDFSH2 SYMBOL -40 -60 -100 UNITS
Peak Repetitive Reverse Voltage VRRM 40 60 100 V DC Blocking Voltage VR 40 60 100 V RMS Reverse Voltage VR(RMS) 28 42 70 V Average Forward Current (TA=50°C) IO 2.0 A Peak Forward Surge Current (8.3ms) IFSM 50 A Operating and Storage Junction Temperature TJ, Tstg -55 to +125 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=40V (CBRDFSH2-40) 25 200 µA IR VR=60V (CBRDFSH2-60) 10 200 µA IR VR=100V (CBRDFSH2-100) 0.5 200 µA VF IF=2.0A (CBRDFSH2-40) 490 520 mV VF IF=2.0A (CBRDFSH2-60) 600 700 mV VF IF=2.0A (CBRDFSH2-100) 800 850 mV CJ VR=4.0V, f=1.0MHz 250 pF R4 (6-December 2019)