Datasheet CBRHDSH1-60 (Central Semiconductor)

CBRHDSH1-60 SURFACE MOUNT www.centra lsemi.com HIGH DENSITY 1 AMP SILICON DESCRIPTION: SCHOTTKY BRIDGE RECTIFIER
The CENTRAL SEMICONDUCTOR CBRHDSH1-60 is a full wave bridge rectifier mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips.
MARKING CODE: CSH106 FEATURES: •
Low Leakage Current (7.0µA TYP @ VRRM)
•
High 1.0A Current Rating
HD DIP CASE •
Low VF Schottky Diodes (600mV MAX @IF=1.0A)
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 60 V DC Blocking Voltage VR 60 V RMS Reverse Voltage VR(RMS) 42 V Average Forward Current IO 1.0 A Peak Forward Surge Current IFSM 20 A Power Dissipation PD 1.2 W Operating Junction Temperature TJ -50 to +125 °C Storage Temperature Tstg -50 to +150 °C Thermal Resistance ΘJA 85 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=60V 7.0 20 µA IR VR=60V, TA=100°C 2.0 10 mA VF IF=500mA 430 500 mV VF IF=1.0A 500 600 mV CJ VR=4.0V, f=1.0MHz 130 pF R3 (19-August 2020)