Datasheet CBRLDSH2-100 (Central Semiconductor)
| 制造商 | Central Semiconductor |
| 描述 | SURFACE MOUNT LOW PROFILE 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER |
| 页数 / 页 | 3 / 1 — CBRLDSH2-100. SURFACE MOUNT. w w w. c e n t r a l s e m i . c o m. LOW … |
| 文件格式/大小 | PDF / 612 Kb |
| 文件语言 | 英语 |
CBRLDSH2-100. SURFACE MOUNT. w w w. c e n t r a l s e m i . c o m. LOW PROFILE. DESCRIPTION:. 2 AMP SILICON
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CBRLDSH2-100 SURFACE MOUNT w w w. c e n t r a l s e m i . c o m LOW PROFILE DESCRIPTION: 2 AMP SILICON
The CENTRAL SEMICONDUCTOR CBRLDSH2-100
SCHOTTKY BRIDGE RECTIFIER
is a full wave Schottky bridge rectifier mounted in a low profile epoxy surface mount molded case, utilizing glass passivated chips.
MARKING CODE: CLP2 LPDIP CASE APPLICATIONS: FEATURES: •
Solid state lighting (SSL)
•
Low leakage current (0.25μA TYP @ 100V)
•
DC-DC converters
•
Low profile case (1.45mm MAX)
•
Polarity protection
•
Low VF Schottky diodes (770mV TYP @ IF=2.0A)
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 100 V DC Blocking Voltage VR 100 V RMS Reverse Voltage VR(RMS) 70 V Average Forward Current (TL=50°C) IO 2.0 A Peak Forward Surge Current (tp=8.3ms) IFSM 50 A Operating Junction Temperature TJ -55 to +125 °C Storage Temperature Tstg -55 to +150 °C Thermal Resistance (Note 1) ΘJA 95 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR VR=100V 0.25 4.0 μA BVR IR=150μA 100 V VF IF=2.0A 770 840 mV CJ VR=4.0V, f=1.0MHz 110 pF Notes: (1) FR-4 epoxy PCB with minimum copper pad area. R3 (17-October 2012)
The CENTRAL SEMICONDUCTOR CBRLDSH2-100
SCHOTTKY BRIDGE RECTIFIER
is a full wave Schottky bridge rectifier mounted in a low profile epoxy surface mount molded case, utilizing glass passivated chips.
MARKING CODE: CLP2 LPDIP CASE APPLICATIONS: FEATURES: •
Solid state lighting (SSL)
•
Low leakage current (0.25μA TYP @ 100V)
•
DC-DC converters
•
Low profile case (1.45mm MAX)
•
Polarity protection
•
Low VF Schottky diodes (770mV TYP @ IF=2.0A)
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 100 V DC Blocking Voltage VR 100 V RMS Reverse Voltage VR(RMS) 70 V Average Forward Current (TL=50°C) IO 2.0 A Peak Forward Surge Current (tp=8.3ms) IFSM 50 A Operating Junction Temperature TJ -55 to +125 °C Storage Temperature Tstg -55 to +150 °C Thermal Resistance (Note 1) ΘJA 95 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR VR=100V 0.25 4.0 μA BVR IR=150μA 100 V VF IF=2.0A 770 840 mV CJ VR=4.0V, f=1.0MHz 110 pF Notes: (1) FR-4 epoxy PCB with minimum copper pad area. R3 (17-October 2012)