Datasheet CBRLDSH2-60 (Central Semiconductor)
| 制造商 | Central Semiconductor |
| 描述 | SURFACE MOUNT LOW PROFILE 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER |
| 页数 / 页 | 3 / 1 — CBRLDSH2-60. SURFACE MOUNT. w w w. c e n t r a l s e m i . c o m. LOW … |
| 文件格式/大小 | PDF / 612 Kb |
| 文件语言 | 英语 |
CBRLDSH2-60. SURFACE MOUNT. w w w. c e n t r a l s e m i . c o m. LOW PROFILE. DESCRIPTION:. 2 AMP SILICON
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CBRLDSH2-60 SURFACE MOUNT w w w. c e n t r a l s e m i . c o m LOW PROFILE DESCRIPTION: 2 AMP SILICON
The CENTRAL SEMICONDUCTOR CBRLDSH2-60
SCHOTTKY BRIDGE RECTIFIER
is a full wave Schottky bridge rectifier mounted in a low profile epoxy surface mount molded case, utilizing glass passivated chips.
MARKING CODE: CL60 LPDIP CASE APPLICATIONS: FEATURES: •
Solid state lighting (SSL)
•
Low leakage current (7.0μA TYP @ 60V)
•
DC-DC converters
•
Low profile case (1.45mm MAX)
•
Polarity protection
•
Low VF Schottky diodes (630mV TYP @ IF=2.0A)
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 60 V DC Blocking Voltage VR 60 V RMS Reverse Voltage VR(RMS) 42 V Average Forward Current (TL=50°C) IO 2.0 A Peak Forward Surge Current (tp=8.3ms) IFSM 50 A Operating Junction Temperature TJ -55 to +125 °C Storage Temperature Tstg -55 to +150 °C Thermal Resistance (Note 1) ΘJA 95 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR VR=60V 7.0 500 μA BVR IR=150μA 60 V VF IF=2.0A 630 700 mV CJ VR=4.0V, f=1.0MHz 117 pF Notes: (1) FR-4 epoxy PCB with minimum copper pad area. R1 (13-August 2012)
The CENTRAL SEMICONDUCTOR CBRLDSH2-60
SCHOTTKY BRIDGE RECTIFIER
is a full wave Schottky bridge rectifier mounted in a low profile epoxy surface mount molded case, utilizing glass passivated chips.
MARKING CODE: CL60 LPDIP CASE APPLICATIONS: FEATURES: •
Solid state lighting (SSL)
•
Low leakage current (7.0μA TYP @ 60V)
•
DC-DC converters
•
Low profile case (1.45mm MAX)
•
Polarity protection
•
Low VF Schottky diodes (630mV TYP @ IF=2.0A)
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 60 V DC Blocking Voltage VR 60 V RMS Reverse Voltage VR(RMS) 42 V Average Forward Current (TL=50°C) IO 2.0 A Peak Forward Surge Current (tp=8.3ms) IFSM 50 A Operating Junction Temperature TJ -55 to +125 °C Storage Temperature Tstg -55 to +150 °C Thermal Resistance (Note 1) ΘJA 95 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR VR=60V 7.0 500 μA BVR IR=150μA 60 V VF IF=2.0A 630 700 mV CJ VR=4.0V, f=1.0MHz 117 pF Notes: (1) FR-4 epoxy PCB with minimum copper pad area. R1 (13-August 2012)