Datasheet CBRSDSH2-100 (Central Semiconductor)
| 制造商 | Central Semiconductor |
| 描述 | SURFACE MOUNT SILICON HIGH DENSITY 2.0 AMP SCHOTTKY BRIDGE RECTIFIER |
| 页数 / 页 | 6 / 1 — CBRSDSH2-100. SURFACE MOUNT SILICON. w w w. c e n t r a l s e m i . c o … |
| 文件格式/大小 | PDF / 1.0 Mb |
| 文件语言 | 英语 |
CBRSDSH2-100. SURFACE MOUNT SILICON. w w w. c e n t r a l s e m i . c o m. HIGH DENSITY. DESCRIPTION:. 2.0 AMP
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CBRSDSH2-100 SURFACE MOUNT SILICON w w w. c e n t r a l s e m i . c o m HIGH DENSITY DESCRIPTION: 2.0 AMP SCHOTTKY BRIDGE RECTIFIER
The CENTRAL SEMICONDUCTOR CBRSDSH2-100 is a full wave bridge rectifier mounted in a durable epoxy surface mount case, utilizing glass passivated chips.
MARKING: FULL PART NUMBER FEATURES: •
High 2.0A Current Rating
•
Low VF Schottky Diodes (700mV MAX @ IF=2.0A)
SMDIP CASE MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 100 V DC Blocking Voltage VR 100 V RMS Reverse Voltage VR(RMS) 70 V Average Forward Current (TA=75°C) IO 2.0 A Peak Forward Surge Current (8.3ms) IFSM 110 A Operating Junction Temperature TJ -50 to +125 °C Storage Temperature Tstg -50 to +150 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=100V 1.0 50 μA VF IF=2.0A 650 700 mV CJ VR=4.0V, f=1.0MHz 280 500 pF R3 (4-January 2013)
The CENTRAL SEMICONDUCTOR CBRSDSH2-100 is a full wave bridge rectifier mounted in a durable epoxy surface mount case, utilizing glass passivated chips.
MARKING: FULL PART NUMBER FEATURES: •
High 2.0A Current Rating
•
Low VF Schottky Diodes (700mV MAX @ IF=2.0A)
SMDIP CASE MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 100 V DC Blocking Voltage VR 100 V RMS Reverse Voltage VR(RMS) 70 V Average Forward Current (TA=75°C) IO 2.0 A Peak Forward Surge Current (8.3ms) IFSM 110 A Operating Junction Temperature TJ -50 to +125 °C Storage Temperature Tstg -50 to +150 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=100V 1.0 50 μA VF IF=2.0A 650 700 mV CJ VR=4.0V, f=1.0MHz 280 500 pF R3 (4-January 2013)