Datasheet CBR1U-D010S, CBR1U-D020S (Central Semiconductor)

CBR1U-D010S CBR1U-D020S www.centra lsemi.com SURFACE MOUNT 1 AMP ULTRA FAST DESCRIPTION: SILICON BRIDGE RECTIFIER
The CENTRAL SEMICONDUCTOR CBR1U-D010S, CBR1U-D020S types are silicon full wave ultra fast bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips.
MARKING: FULL PART NUMBER SMDIP CASE MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL CBR1U-D010S CBR1U-D020S UNITS
Peak Repetitive Reverse Voltage VRRM 100 200 V DC Blocking Voltage VR 100 200 V RMS Reverse Voltage VR(RMS) 70 140 V Average Forward Current (TA=40°C) IO 1.0 A Peak Forward Surge Current IFSM 50 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 40 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR VR=Rated VRRM 5.0 µA IR VR=Rated VRRM, TA=125°C 1.0 mA VF IF=1.0A 1.05 V trr IF=500mA, IR=1.0A, Irr=250mA 50 ns R3 (4-January 2010)