Datasheet CBR10-J010 (Central Semiconductor)

制造商Central Semiconductor
描述SILICON BRIDGE RECTIFIERS 10 AMP, 100 THRU 1000 VOLT
页数 / 页8 / 1 — CBR10-J010 SERIES. www.centra lsemi.com. SILICON BRIDGE RECTIFIERS. 10 …
文件格式/大小PDF / 653 Kb
文件语言英语

CBR10-J010 SERIES. www.centra lsemi.com. SILICON BRIDGE RECTIFIERS. 10 AMP, 100 THRU 1000 VOLT. DESCRIPTION:

Datasheet CBR10-J010 Central Semiconductor

该数据表的模型线

文件文字版本

CBR10-J010 SERIES www.centra lsemi.com SILICON BRIDGE RECTIFIERS 10 AMP, 100 THRU 1000 VOLT DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR10-J010 series devices are silicon, single phase, full wave bridge rectifiers designed for general purpose, high current applications.
MARKING: FULL PART NUMBER CASE CM MAXIMUM RATINGS:
(TA=50°C unless otherwise noted)
CBR10 SYMBOL -J010 -J020 -J040 -J060 -J080 -J090 -J100 UNITS
Peak Repetitive Reverse Voltage VRRM 100 200 400 600 800 900 1000 V DC Blocking Voltage VR 100 200 400 600 800 900 1000 V RMS Reverse Voltage VR(RMS) 70 140 280 420 560 630 700 V Average Forward Current (TC=80°C) IO 10 A Average Forward Current (TC=30°C) IO 5.0 A Peak Forward Surge Current IFSM 150 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJC 3.0 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR VR=Rated VRRM 10 µA VF IF=5.0A 1.2 V R3 (12-March 2018)