Datasheet CBR10F-010P (Central Semiconductor)
| 制造商 | Central Semiconductor |
| 描述 | FAST RECOVERY SILICON BRIDGE RECTIFIERS 10 AMP, 100 THRU 600 VOLT |
| 页数 / 页 | 5 / 1 — CBR10F-010P SERIES. FAST RECOVERY. w w w. c e n t r a l s e m i . c o m. … |
| 文件格式/大小 | PDF / 624 Kb |
| 文件语言 | 英语 |
CBR10F-010P SERIES. FAST RECOVERY. w w w. c e n t r a l s e m i . c o m. SILICON BRIDGE RECTIFIERS. DESCRIPTION:
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CBR10F-010P SERIES FAST RECOVERY w w w. c e n t r a l s e m i . c o m SILICON BRIDGE RECTIFIERS DESCRIPTION: 10 AMP, 100 THRU 600 VOLT
The CENTRAL SEMICONDUCTOR CBR10F-010P series devices are silicon, single phase, full wave bridge rectifiers designed for fast recovery applications. The molded epoxy case has a built-in metal baseplate for heat sink mounting. The device utilizes standard 0.25” FASTON terminals.
MARKING: FULL PART NUMBER CASE FP MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
CBR10F SYMBOL -010P -020P -040P -060P UNITS
Peak Repetitive Reverse Voltage VRRM 100 200 400 600 V DC Blocking Voltage VR 100 200 400 600 V RMS Reverse Voltage VR(RMS) 70 140 280 420 V Average Forward Current (TC=60°C) IO 10 A Peak Forward Surge Current IFSM 200 A RMS Isolation Voltage (case to lead) Viso 2500 Vac Operating and StorageJunction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJC 1.5 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR VR=Rated VRRM 10 μA VF IF=5.0A 1.3 V trr IF=0.5A, IR=1.0A, Irr=0.25A (100V, 200V, 400V) 200 ns trr IF=0.5A, IR=1.0A, Irr=0.25A (600V) 350 ns R1 (4-November 2013)
The CENTRAL SEMICONDUCTOR CBR10F-010P series devices are silicon, single phase, full wave bridge rectifiers designed for fast recovery applications. The molded epoxy case has a built-in metal baseplate for heat sink mounting. The device utilizes standard 0.25” FASTON terminals.
MARKING: FULL PART NUMBER CASE FP MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
CBR10F SYMBOL -010P -020P -040P -060P UNITS
Peak Repetitive Reverse Voltage VRRM 100 200 400 600 V DC Blocking Voltage VR 100 200 400 600 V RMS Reverse Voltage VR(RMS) 70 140 280 420 V Average Forward Current (TC=60°C) IO 10 A Peak Forward Surge Current IFSM 200 A RMS Isolation Voltage (case to lead) Viso 2500 Vac Operating and StorageJunction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJC 1.5 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR VR=Rated VRRM 10 μA VF IF=5.0A 1.3 V trr IF=0.5A, IR=1.0A, Irr=0.25A (100V, 200V, 400V) 200 ns trr IF=0.5A, IR=1.0A, Irr=0.25A (600V) 350 ns R1 (4-November 2013)